EP0869611 - Faster switching GaAs fet switches by illumination with high intensity light [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 31.05.2002 Database last updated on 08.10.2024 | Most recent event Tooltip | 12.06.2009 | Change - representative | published on 15.07.2009 [2009/29] | Applicant(s) | For all designated states Agilent Technologies, Inc. (A Delaware Corporation) 395 Page Mill Road Palo Alto CA 94303 / US | [N/P] |
Former [2001/41] | For all designated states Agilent Technologies, Inc. (a Delaware corporation) 395 Page Mill Road Palo Alto, CA 94303 / US | ||
Former [2001/32] | For all designated states Agilent Technologies Inc. a Delaware Corporation 395 Page Mill Road Palo Alto, CA 94303 / US | ||
Former [2001/31] | For all designated states Agilent Technologies Inc. a Delaware Corporation 395 Page Mill Road Palo Alto, CA 94303 / US | ||
Former [2001/13] | For all designated states Hewlett-Packard Company, A Delaware Corporation 3000 Hanover Street Palo Alto, CA 94304 / US | ||
Former [1998/41] | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto, California 94304 / US | Inventor(s) | 01 /
Nicholson, Dean B. 120 Vinecrest Circle Windsor, CA 95492 / US | 02 /
Ehlers, Eric R. 1413 St. Francis Road Santa Rosa, CA 95409 / US | [1998/41] | Representative(s) | Schoppe, Fritz Schoppe, Zimmermann, Stöckeler & Zinkler Patentanwälte Postfach 246 82043 Pullach bei München / DE | [N/P] |
Former [2009/29] | Schoppe, Fritz Schoppe, Zimmermann, Stöckeler & Zinkler Patentanwälte Postfach 246 82043 Pullach bei München / DE | ||
Former [1998/41] | Schoppe, Fritz, Dipl.-Ing. Schoppe & Zimmermann, Patentanwälte, Postfach 71 08 67 81458 München / DE | Application number, filing date | 98101556.3 | 29.01.1998 | [1998/41] | Priority number, date | US19970829924 | 01.04.1997 Original published format: US 829924 | [1998/41] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0869611 | Date: | 07.10.1998 | Language: | EN | [1998/41] | Type: | B1 Patent specification | No.: | EP0869611 | Date: | 25.07.2001 | Language: | EN | [2001/30] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.08.1998 | Classification | IPC: | H03K17/693, H01P1/15 | [1998/41] | CPC: |
H01L31/167 (EP,US)
| Designated contracting states | DE, GB [1999/24] |
Former [1998/41] | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | GaAs FET Schalter mit erhöhter Schaltgeschwindigkeit durch Beleuchtung mit Licht hoher Intensität | [1998/41] | English: | Faster switching GaAs fet switches by illumination with high intensity light | [1998/41] | French: | Commutateurs FET AsGa à vitesse de commutation améliorée par illumination à haute intensité | [1998/41] | Examination procedure | 29.01.1999 | Examination requested [1999/13] | 24.03.1999 | Despatch of a communication from the examining division (Time limit: M06) | 29.09.1999 | Reply to a communication from the examining division | 04.09.2000 | Despatch of communication of intention to grant (Approval: No) | 10.01.2001 | Despatch of communication of intention to grant (Approval: later approval) | 23.01.2001 | Communication of intention to grant the patent | 16.02.2001 | Fee for grant paid | 16.02.2001 | Fee for publishing/printing paid | Opposition(s) | 26.04.2002 | No opposition filed within time limit [2002/29] | Fees paid | Renewal fee | 13.12.1999 | Renewal fee patent year 03 | 04.01.2001 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JPS6355978 ; | [X]JPH04139877 ; | [A]US5347239 (LOEHNER HENRY F [US], et al) [A] 1,10,11 * column 1, lines 6-10 * * column 1, lines 61-68 *; | [X] - PATENT ABSTRACTS OF JAPAN, (19880730), vol. 012, no. 277, Database accession no. (E - 640), & JP63055978 A 19880310 (YOKOGAWA ELECTRIC CORP) [X] 1-11 * abstract * | [X] - PATENT ABSTRACTS OF JAPAN, (19920902), vol. 016, no. 415, Database accession no. (E - 1257), & JP04139877 A 19920513 (NEC CORP) [X] 1-11 * abstract * | [A] - SASAKI H ET AL, "ANALYSIS OF GATE LAG IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR USING LIGHT ILLUMINATION", JAPANESE JOURNAL OF APPLIED PHYSICS, (199512), vol. 34, no. 12A, PART 01, pages 6346 - 6351, XP000628352 [A] 1,10,11 * the whole document * DOI: http://dx.doi.org/10.1143/JJAP.34.6346 |