EP0871228 - Semiconductor substrate, semiconductor device and method of manufacturing the same [Right-click to bookmark this link] | Status | The application has been refused Status updated on 09.04.2010 Database last updated on 02.09.2024 | Most recent event Tooltip | 09.04.2010 | Refusal of application | published on 12.05.2010 [2010/19] | Applicant(s) | For all designated states Panasonic Corporation 1006, Oaza Kadoma Kadoma-shi Osaka 571-8501 / JP | [N/P] |
Former [2008/47] | For all designated states Panasonic Corporation 1006, Oaza Kadoma Kadoma-shi Osaka 571-8501 / JP | ||
Former [2001/37] | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Oaza Kadoma Kadoma-shi, Osaka / JP | ||
Former [1998/42] | For all designated states Matsushita Electronics Corporation 1-1, Saiwai-cho Takatsuki-shi, Osaka 569-1193 / JP | Inventor(s) | 01 /
Hashimoto, Tadao 1-23-2-202, Mizudo-cho Amagasaki-shi, Hyogo 661-0027 / JP | 02 /
Imafuji, Osamu 1-10-5-507, Kamihamuro Takatsuki-shi, Osaka 569-1044 / JP | 03 /
Yuri, Masaaki 6-26-1201, Funaki-cho Ibaraki-shi, Osaka 567-0829 / JP | 04 /
Ishida, Masahiro 2-30-10, Takayanagi Neyagawa-shi, Osaka 572-0051 / JP | [1998/42] | Representative(s) | Grünecker Patent- und Rechtsanwälte PartG mbB Leopoldstraße 4 80802 München / DE | [N/P] |
Former [1998/42] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät Maximilianstrasse 58 80538 München / DE | Application number, filing date | 98106483.5 | 08.04.1998 | [1998/42] | Priority number, date | JP19970090675 | 09.04.1997 Original published format: JP 9067597 | [1998/42] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0871228 | Date: | 14.10.1998 | Language: | EN | [1998/42] | Type: | A3 Search report | No.: | EP0871228 | Date: | 24.10.2001 | [2001/43] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 10.09.2001 | Classification | IPC: | H01L33/00, H01S3/19, H01L27/15 | [2001/43] | CPC: |
H01L33/007 (EP,US);
B82Y20/00 (EP,US);
C30B25/18 (EP,US);
H01S2301/173 (EP,US);
H01S5/0207 (EP,US);
H01S5/021 (EP,US);
|
Former IPC [1998/42] | H01L33/00, H01S3/19 | Designated contracting states | DE, GB [2002/29] |
Former [1998/42] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Halbleitersubstrat, Halbleitervorrichtung und Herstellungsverfahren | [1998/42] | English: | Semiconductor substrate, semiconductor device and method of manufacturing the same | [1998/42] | French: | Substrat semi-conducteur, dispositif semi-conducteur et procédé de fabrication | [1998/42] | Examination procedure | 28.03.2002 | Examination requested [2002/23] | 11.05.2006 | Despatch of a communication from the examining division (Time limit: M06) | 17.11.2006 | Reply to a communication from the examining division | 27.08.2007 | Despatch of a communication from the examining division (Time limit: M06) | 07.02.2008 | Reply to a communication from the examining division | 17.11.2009 | Application refused, date of legal effect [2010/19] | 17.11.2009 | Date of oral proceedings | 10.12.2009 | Despatch of communication that the application is refused, reason: substantive examination [2010/19] | 10.12.2009 | Minutes of oral proceedings despatched | Fees paid | Renewal fee | 26.04.2000 | Renewal fee patent year 03 | 26.04.2001 | Renewal fee patent year 04 | 29.04.2002 | Renewal fee patent year 05 | 29.04.2003 | Renewal fee patent year 06 | 30.04.2004 | Renewal fee patent year 07 | 29.04.2005 | Renewal fee patent year 08 | 29.03.2006 | Renewal fee patent year 09 | 27.04.2007 | Renewal fee patent year 10 | 26.03.2008 | Renewal fee patent year 11 | 29.04.2009 | Renewal fee patent year 12 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]EP0332329 (FUJITSU LTD [JP]) [Y] 15,17 * the whole document *; | [XY]US4990972 (SATOH SHIRO [JP], et al) [X] 1,2,4,6-14,16 * column 3, line 42 - column 4, line 26 * [Y] 15,17; | [X]JPH08330628 (TOSHIBA CORP) [X] 1,2,4,6,7,9,10,12-14,16; | [PX]EP0810674 (SUMITOMO ELECTRIC INDUSTRIES [JP]) [PX] 1,2,4,6-14,16* the whole document *; | [E]US5864171 (YAMAMOTO MASAHIRO [JP], et al) [E] 1,2,4,6,7,9,10,12-14,16 * column 13, line 38 - column 15, line 21 * |