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Extract from the Register of European Patents

EP About this file: EP0917200

EP0917200 - Semiconductor device, electrostatic discharge protection device, and dielectric breakdown preventing method [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  26.09.2003
Database last updated on 11.09.2024
Most recent event   Tooltip26.09.2003Withdrawal of applicationpublished on 12.11.2003  [2003/46]
Applicant(s)For all designated states
NEC Electronics Corporation
1753 Shimonumabe Nakahara-ku
Kawasaki, Kanagawa 211-8668 / JP
[N/P]
Former [2003/18]For all designated states
NEC Electronics Corporation
1753 Shimonumabe, Nakahara-ku
Kawasaki, Kanagawa 211-8668 / JP
Former [1999/20]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Sasaki, Makoto
NEC Corporation, 7-1, Shiba 5-chome
Minato-ku, Tokyo / JP
[1999/20]
Representative(s)Baronetzky, Klaus, et al
Splanemann
Patentanwälte Partnerschaft
Rumfordstrasse 7
80469 München / DE
[N/P]
Former [1999/20]Baronetzky, Klaus, Dipl.-Ing., et al
Patentanwälte Dipl.-Ing. R. Splanemann, Dr. B. Reitzner, Dipl.-Ing. K. Baronetzky Tal 13
80331 München / DE
Application number, filing date98121454.711.11.1998
[1999/20]
Priority number, dateJP1997032515612.11.1997         Original published format: JP 32515697
[1999/20]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0917200
Date:19.05.1999
Language:EN
[1999/20]
Search report(s)(Supplementary) European search report - dispatched on:EP02.03.1999
ClassificationIPC:H01L27/02
[1999/20]
CPC:
H01L27/0266 (EP,US); H01L27/0288 (EP,US); H01L27/04 (KR)
Designated contracting statesDE,   FR,   GB,   IT [2000/04]
Former [1999/20]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Halbleiterbauelement, Entladungsschutzvorrichtung, und Verfahren zur Verhinderung eines dielektrischen Durchbruchs[1999/20]
English:Semiconductor device, electrostatic discharge protection device, and dielectric breakdown preventing method[1999/20]
French:Dispositif semi-conducteur, dispositif de protection contre des décharges électrostatiques, et méthode de prévention du claquage diélectrique[1999/20]
Examination procedure09.03.1999Examination requested  [1999/20]
07.07.2003Despatch of a communication from the examining division (Time limit: M04)
11.09.2003Application withdrawn by applicant  [2003/46]
Fees paidRenewal fee
17.10.2000Renewal fee patent year 03
10.10.2001Renewal fee patent year 04
14.10.2002Renewal fee patent year 05
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Documents cited:Search[X]GB2281813  (AT & T CORP [US]) [X] 1-4,8-10 * abstract * * page 4, line 10 - line 24 * * page 5, line 19 - line 27 *;
 [X]EP0656659  (SIEMENS AG [DE]) [X] 1-4,8-10 * abstract * * column 6, line 40 - column 8, line 54 *;
 [X]US5637902  (JIANG CHUN [US]) [X] 1-5,9,10 * the whole document *;
 [AD]JPH02238668  ;
 [A]EP0292327  (SONY CORP [JP]) [A] 1-3,9,10 * abstract *
 [AD]  - PATENT ABSTRACTS OF JAPAN, (19901207), vol. 014, no. 553, Database accession no. (E - 1010), & JP02238668 A 19900920 (FUJITSU LTD) [AD] 1-3,9,10 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.