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Extract from the Register of European Patents

EP About this file: EP0919647

EP0919647 - Thermal control device [Right-click to bookmark this link]
Former [1999/22]Heat flux control device
[2006/31]
StatusNo opposition filed within time limit
Status updated on  29.02.2008
Database last updated on 16.11.2024
Most recent event   Tooltip29.02.2008No opposition filed within time limitpublished on 02.04.2008  [2008/14]
Applicant(s)For all designated states
NEC TOSHIBA Space Systems, Ltd.
4035, Ikebe-cho, Tsuzuki-ku
Yokohama, Kanagawa 224-8555 / JP
[2002/10]
Former [1999/22]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Okamoto, Akira c/o NEC Corporation
7-1, Shiba-5-chome, Minato-ku
Tokyo / JP
02 / Shimakawa, Yuichi c/o NEC Corporation
7-1, Shiba-5-chome, Minato-ku
Tokyo / JP
03 / Manako, Takashi c/o NEC Corporation
7-1, Shiba-5-chome, Minato-ku
Tokyo / JP
[1999/22]
Representative(s)von Samson-Himmelstjerna, Friedrich, et al
Samson & Partner Patentanwälte mbB
Widenmayerstrasse 6
80538 München / DE
[N/P]
Former [1999/22]von Samson-Himmelstjerna, Friedrich R., Dipl.-Phys., et al
SAMSON & PARTNER Widenmayerstrasse 5
80538 München / DE
Application number, filing date98122377.925.11.1998
[1999/22]
Priority number, dateJP1997032254925.11.1997         Original published format: JP 32254997
JP1998027482629.09.1998         Original published format: JP 27482698
[1999/22]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0919647
Date:02.06.1999
Language:EN
[1999/22]
Type: B1 Patent specification 
No.:EP0919647
Date:25.04.2007
Language:EN
[2007/17]
Search report(s)(Supplementary) European search report - dispatched on:EP17.02.1999
ClassificationIPC:C30B29/22, B64G1/50, G02F1/01
[1999/22]
CPC:
B64G1/54 (EP,US); B64G1/226 (EP,US); B64G1/50 (EP,US);
B64G1/503 (EP,US)
Designated contracting statesDE,   FR [2000/07]
Former [1999/22]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Thermische Steuerungseinrichtung[2006/31]
English:Thermal control device[2006/31]
French:Dispositif de contrôle du flux thermique[1999/22]
Former [1999/22]Einrichtung zur Steuerung des Wärmeflusses
Former [1999/22]Heat flux control device
Examination procedure25.03.1999Examination requested  [1999/22]
03.12.1999Loss of particular rights, legal effect: designated state(s)
16.03.2000Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, FI, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE
28.01.2002Despatch of a communication from the examining division (Time limit: M07)
04.09.2002Reply to a communication from the examining division
16.09.2002Despatch of a communication from the examining division (Time limit: M04)
24.01.2003Reply to a communication from the examining division
18.08.2003Despatch of a communication from the examining division (Time limit: M06)
01.03.2004Reply to a communication from the examining division
31.01.2006Despatch of a communication from the examining division (Time limit: M04)
12.06.2006Reply to a communication from the examining division
21.07.2006Communication of intention to grant the patent
23.11.2006Fee for grant paid
23.11.2006Fee for publishing/printing paid
Opposition(s)28.01.2008No opposition filed within time limit [2008/14]
Fees paidRenewal fee
27.11.2000Renewal fee patent year 03
29.11.2001Renewal fee patent year 04
28.11.2002Renewal fee patent year 05
28.11.2003Renewal fee patent year 06
24.11.2004Renewal fee patent year 07
30.11.2005Renewal fee patent year 08
24.11.2006Renewal fee patent year 09
Penalty fee
Penalty fee Rule 85a EPC 1973
10.01.2000AT   M01   Not yet paid
10.01.2000BE   M01   Not yet paid
10.01.2000CH   M01   Not yet paid
10.01.2000CY   M01   Not yet paid
10.01.2000DK   M01   Not yet paid
10.01.2000ES   M01   Not yet paid
10.01.2000FI   M01   Not yet paid
10.01.2000GB   M01   Not yet paid
10.01.2000GR   M01   Not yet paid
10.01.2000IE   M01   Not yet paid
10.01.2000IT   M01   Not yet paid
10.01.2000LU   M01   Not yet paid
10.01.2000MC   M01   Not yet paid
10.01.2000NL   M01   Not yet paid
10.01.2000PT   M01   Not yet paid
10.01.2000SE   M01   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[X]US3565671  (TEEG ROBERT O, et al) [X] 1,4,6,8-11 * column 2, lines 37-61 * * column 3, line 23 - column 6, line 22; figures 1-6 *;
 [X]US4707412  (BEALE HARRY A [US]) [X] 1,4,6,9,10 * column A * * column 2, lines 36-64; figure 1 *;
 [A]US5095384  (DENATALE JEFFREY F [US]) [A] 1,4,6,9,10 * column 1, lines 17-37 * * column 2, line 3 - column 3, line 4; figures 1-7 *;
 [A]EP0526767  (DORNIER GMBH [DE]) [A] 1,4,9,10 * column 2, line 28 - column 3, line 15; figure 1 *;
 [A]EP0710735  (AGENCY IND SCIENCE TECHN [JP], et al) [A] 3 * abstract * * column 1, line 3 - column 2, line 9 * * column 2, lines 31-46 * * column 4, lines 20-41; figure 1 *;
 [A]US3409247  (PEZDIRTZ GEORGE F) [A] 9,11 * column 1, lines 24-29 * * column 2, line 61 - column 3, line 41; figures 1-4 *;
 [A]US5669584  (HICKEY EDWARD S [US]) [A] 9,11 * column A * * column 2, line 43 - column 3, line 29; figures 1-4 *
 [A]  - HASHIMOTO ET AL., "CRYSTAL GROWTH AND CHARACTERIZATION OF La1-xMxMnO3 (M=Ca, Sr)", JOURNAL OF CRYSTAL GROWTH, Amsterdam, The Netherlands, vol. 84, no. 2, pages 207 - 211, XP002005875 [A] 3 * paragraph: "3. Results and Discussion"; figure 4 *

DOI:   http://dx.doi.org/10.1016/0022-0248(87)90132-1
ExaminationUS5330708
 JPH0388302
 US5433056
    - INSPEC/IEE [online], abstract AN4201918 of HENDRIX B C et al: *dUnderstanding doped V2O3 as a functional positive temperature coefficient material*d, Journal of Materials Science: Materials in Electronics, June 1992, UK, vol. 3, no. 2, pages 113 - 119, ISSN 0957-4522
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.