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EP0874393
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Extract from the Register of European Patents
EP Citations: EP0874393
| Cited in | Search | Type: | Patent literature | Publication No.: | JPH08298312
[X] ; | Type: | Patent literature | Publication No.: | US5663085
[A] (TANIGAWA TAKAHO [JP]) [A] 4-7,9-15,17,18,25-30,32-52 * column 3, line 50 - column 4, line 61 * * column 8, line 22 - line 45 * * claims 1-3 *; | Type: | Patent literature | Publication No.: | EP0557590
[XA] (SAMSUNG ELECTRONICS CO LTD [KR]) [X] 1,2,4,5,16 * column 5, line 40 - column 7, line 20 * * figures 9,10,27-30 * [A] 3,6-15,17-52; | Type: | Patent literature | Publication No.: | DE4419074
[XA] (MICRON SEMICONDUCTOR INC [US]) [X] 1,19 * the whole document * [A] 2-18,20-52; | Type: | Patent literature | Publication No.: | US5597754
[XA] (LOU CHINE-GIE [TW], et al) [X] 1 * the whole document * [A] 2-52; | Type: | Patent literature | Publication No.: | US5723887
[PX] (TSUCHIMOTO JUNICHI [JP], et al) [PX] 1-5,7,9,10,16,17 * column 3, line 55 - column 6, line 40 *; | Type: | Patent literature | Publication No.: | US5266514
[A] (TUAN HSIAO-CHIN [TW], et al) [A] 1-52 * column 4, line 33 - line 47 * * claims 1-20 *; | Type: | Patent literature | Publication No.: | US5612558
[A] (HARSHFIELD STEVEN T [US]) [A] 1,21-23,41-52 * the whole document * | Type: | Non-patent literature | Publication information: | [X] - PATENT ABSTRACTS OF JAPAN, (19970331), vol. 1997, no. 03, & JP08298312 A 19961112 (NEC CORP) [X] 1-3,8,16,19-21,23,24,31 * abstract * | Type: | Non-patent literature | Publication information: | [XA] - HIROHITO WATANABE ET AL, "HEMISPHERICAL GRAINED SI FORMATION ON IN-SITU PHOSPHORUS DOPED AMORPHOUS-SI ELECTRODE FOR 256MB DRAM'S CAPACITOR", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, (19950701), vol. 42, no. 7, ISSN 0018-9383, pages 1247 - 1253, XP000515060 [X] 1-5,7,8,19,20 * the whole document * [A] 6,9-18,21-52 | DOI: | http://dx.doi.org/10.1109/16.391206 |