Deutsch English Français

Contact

EP0874393

European procedure

Quick help

Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability

2022.02.11

More...

News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...

Extract from the Register of European Patents

EP About this file: EP0874393

EP0874393 - Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 27.06.2008 Database last updated on 18.11.2024
Most recent event Tooltip	27.06.2008	Application deemed to be withdrawn	published on 30.07.2008 [2008/31]
Applicant(s)	For all designated states Samsung Electronics Co., Ltd. 416 Maetan-dong Paldal-gu Suwon City, Kyungki-do / KR
	[N/P]
Former [1998/44]	For all designated states Samsung Electronics Co., Ltd. 416 Maetan-dong, Paldal-gu Suwon City, Kyungki-do / KR
Inventor(s)	01 / Kim, Young-Sun 20-33 Gongduk-Dong Mapo-Gu, Seoul / KR
	02 / Won, Seok-Jun No. 1603-25, Bongcheon 7-dong Kwanak-gu, Seoul / KR
	03 / Kim, Young-Min No. 380 Kugal-ri, Kiheung-eup Yongin-city, Kyungki-do / KR
	04 / Kim, Kyung-Hoon No. 31-4, Wonhyoro 1-ga Yongsan-gu, Seoul / KR
	05 / Nam, Kab-Jin No. 244-26 Hwaseo 2-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	06 / Kim, Young-Dae No. 278-1, Younghwa-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	07 / Park, Young-Wook No. 37-42, Jeongja-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	08 / Lee, Seung-Hwan 817-7, Bangbae-Dong Seocho-Gu, Seoul / KR
	09 / Lee, Sang-Hyeop No. 1403-B-Marronnier-dong,7-1 Nongseo-li Kihung-up, Yongsin-shi, Kyunggi-do / KR
	10 / Shim, Se-Jin 1804-503 Haetbit-maeul, Dukyang-gu Koyang-shi, Kyunggi-do / KR
	11 / Jin, You Chan 101-801, Woosung Apt, Maetan-Dong Paldal-Gu, Suwon-City, Kyunggi-Do / KR
	12 / Moon, Ju-Tae 1309 Youngkwang-APT, Songjuk-dong, Jangan-gu Suwon-shi, Kyunggi-do / KR
	13 / Choi, Jin-Seok 104-202, Hankiik Apt, Maetan-Dong Paldal-Gu, Suwon-City, Kyunggi-Do / KR
	[1999/04]
Former [1998/48]	01 / Kim, Young-Sun 20-33 Gongduk-Dong Mapo-Gu, Seoul / KR
	02 / Won, Seok-Jun No. 1603-25, Bongcheon 7-dong Kwanak-gu, Seoul / KR
	03 / Kim, Young-Min No. 380 Kugal-ri, Kiheung-eup Yongin-city, Kyungki-do / KR
	04 / Kim, Kyung-Hoon No. 31-4, Wonhyoro 1-ga Yongsan-gu, Seoul / KR
	05 / Nam, Kab-Jin No. 244-26 Hwaseo 2-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	06 / Kim, Young-Dae No. 278-1, Younghwa-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	07 / Park, Young-Wook No. 37-42, Jeongja-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	08 / Lee, Seung-Hwan 817-7, Bangbae-Dong Seocho-Gu, Seoul / KR
	09 / Lee, Sang-Hyeop No. 1403-B-Marronnier-dong,7-1 Nongseo-li Kihung-up, Yongsin-shi, Kyunggi-do / KR
	10 / Shim, Se-Jin 108-2, Guro-Dong Guro-Gu, Seoul / KR
	11 / Jin, You Chan 101-801, Woosung Apt, Maetan-Dong Paldal-Gu, Suwon-City, Kyunggi-Do / KR
	12 / Moon, Ju-Tae 65 Songjook-Dong, Jangan-Gu Suwon-City, Kyunggi-Do / KR
	13 / Choi, Jin-Seok 104-202, Hankiik Apt, Maetan-Dong Paldal-Gu, Suwon-City, Kyunggi-Do / KR
Former [1998/44]	01 / Kim, Young-Sun 20-33 Gongduk-Dong Mapo-Gu, Seoul / KR
	02 / Won, Seok-Jun No. 1603-25, Bongcheon 7-dong Kwanak-gu, Seoul / KR
	03 / Kim, Young-Min No. 380 Kugal-ri, Kiheung-eup Yongin-city, Kyungki-do / KR
	04 / Kim, Kyung-Hoon No. 31-4, Wonhyoro 1-ga Yongsan-gu, Seoul / KR
	05 / Nam, Kab-Jin No. 244-26 Hwaseo 2-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	06 / Kim, Young-Dae No. 278-1, Younghwa-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	07 / Park, Young-Wook No. 37-42, Jeongja-dong, Jangahn-gu Suwon-city, Kyungki-do / KR
	08 / Lee, Seung-Hwan 817-7, Bangbae-Dong Seocho-Gu, Seoul / KR
	09 / Lee, Sang-Hyeop 19 Jamsil-Dong SongPa-gu, Seoul / KR
	10 / Shim, Se-Jin 108-2, Guro-Dong Guro-Gu, Seoul / KR
	11 / Jin, You Chan 101-801, Woosung Apt, Maetan-Dong Paldal-Gu, Suwon-City, Kyunggi-Do / KR
	12 / Moon, Ju-Tae 65 Songjook-Dong, Jangan-Gu Suwon-City, Kyunggi-Do / KR
	13 / Choi, Jin-Seok 104-202, Hankiik Apt, Maetan-Dong Paldal-Gu, Suwon-City, Kyunggi-Do / KR
Representative(s)	Tunstall, Christopher Stephen Harrison Goddard Foote Fountain Precinct Balm Green Sheffield S1 2JA / GB
	[N/P]
Former [1998/44]	Tunstall, Christopher Stephen Dibb Lupton Alsop, Fountain Precinct Balm Green, Sheffield S1 1RZ / GB
Application number, filing date	98302397.9	27.03.1998
	[1998/44]
Priority number, date	KR19970035460	28.07.1997 Original published format: KR 9735460
	KR19970048930	26.09.1997 Original published format: KR 9748930
	KR19970014833	22.04.1997 Original published format: KR 9714833
	KR19970023381	05.06.1997 Original published format: KR 9723381
	KR19970016812	30.04.1997 Original published format: KR 9716812
	[1998/44]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0874393
	Date:	28.10.1998
	Language:	EN
	[1998/44]
	Type:	A3 Search report
	No.:	EP0874393
	Date:	05.12.2001
	[2001/49]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	23.10.2001
Classification	IPC:	H01L21/3205, H01L21/02	[2001/48]
	CPC:	H01L28/84 (EP,US); Y10S438/964 (EP,US)
	Former IPC [1998/44]	H01L21/3205
Designated contracting states	DE, FR, GB, IT, NL [2002/44]
Former [2002/35]	DE, FR, GB
Former [1998/44]	AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE
Title	German:	Herstellungsverfahren von Kondensatoren für integrierte Schaltungen mit verbesserten Charakteristiken von Elektroden- und Dielektricumschichten sowie so hergestllete Kondensatoren	[1998/44]
	English:	Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby	[1998/44]
	French:	Procédé de fabrication de condensateurs pour circuits intégrés ayant des caractéristiques améliorées d'électrode et de diélectrique et condensateurs ainsi obtenus	[1998/44]
Examination procedure	06.04.1998	Examination requested [1998/44]
	14.04.2005	Despatch of a communication from the examining division (Time limit: M04)
	15.08.2005	Reply to a communication from the examining division
	27.07.2007	Despatch of a communication from the examining division (Time limit: M06)
	07.02.2008	Application deemed to be withdrawn, date of legal effect [2008/31]
	14.03.2008	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2008/31]
Fees paid	Renewal fee
	26.01.2000	Renewal fee patent year 03
	16.02.2001	Renewal fee patent year 04
	22.02.2002	Renewal fee patent year 05
	31.01.2003	Renewal fee patent year 06
	12.02.2004	Renewal fee patent year 07
	18.02.2005	Renewal fee patent year 08
	01.03.2006	Renewal fee patent year 09
	20.12.2006	Renewal fee patent year 10
	Penalty fee
	Penalty fee Rule 85a EPC 1973
	11.07.2002	IT M01 Fee paid on 31.07.2002
	11.07.2002	NL M01 Fee paid on 31.07.2002
	Additional fee for renewal fee
	31.03.2008	11 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]JPH08298312 ;
		[A]US5663085 (TANIGAWA TAKAHO [JP]) [A] 4-7,9-15,17,18,25-30,32-52 * column 3, line 50 - column 4, line 61 * * column 8, line 22 - line 45 * * claims 1-3 *;
		[XA]EP0557590 (SAMSUNG ELECTRONICS CO LTD [KR]) [X] 1,2,4,5,16 * column 5, line 40 - column 7, line 20 * * figures 9,10,27-30 * [A] 3,6-15,17-52;
		[XA]DE4419074 (MICRON SEMICONDUCTOR INC [US]) [X] 1,19 * the whole document * [A] 2-18,20-52;
		[XA]US5597754 (LOU CHINE-GIE [TW], et al) [X] 1 * the whole document * [A] 2-52;
		[PX]US5723887 (TSUCHIMOTO JUNICHI [JP], et al) [PX] 1-5,7,9,10,16,17 * column 3, line 55 - column 6, line 40 *;
		[A]US5266514 (TUAN HSIAO-CHIN [TW], et al) [A] 1-52 * column 4, line 33 - line 47 * * claims 1-20 *;
		[A]US5612558 (HARSHFIELD STEVEN T [US]) [A] 1,21-23,41-52 * the whole document *
		[X] - PATENT ABSTRACTS OF JAPAN, (19970331), vol. 1997, no. 03, & JP08298312 A 19961112 (NEC CORP) [X] 1-3,8,16,19-21,23,24,31 * abstract *
		[XA] - HIROHITO WATANABE ET AL, "HEMISPHERICAL GRAINED SI FORMATION ON IN-SITU PHOSPHORUS DOPED AMORPHOUS-SI ELECTRODE FOR 256MB DRAM'S CAPACITOR", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, (19950701), vol. 42, no. 7, ISSN 0018-9383, pages 1247 - 1253, XP000515060 [X] 1-5,7,8,19,20 * the whole document * [A] 6,9-18,21-52 DOI: http://dx.doi.org/10.1109/16.391206

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.

Legal notice
Terms of use
24.2.25; 34p