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Extract from the Register of European Patents

EP About this file: EP0887857

EP0887857 - Method of making an sram cell and structure [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  14.09.2007
Database last updated on 18.01.2025
Most recent event   Tooltip26.09.2008Lapse of the patent in a contracting state
New state(s): FR
published on 29.10.2008  [2008/44]
Applicant(s)For all designated states
STMicroelectronics, Inc.
1310 Electronics Drive Carrollton
Texas 75006-5039 / US
[2006/42]
Former [1999/01]For all designated states
STMicroelectronics Inc
1310 Electronics Drive
Carrollton, Texas 75006-5039 / US
Inventor(s)01 / Chan, Tsui Chiu
1633 Camero Drive
Carrollton, Texas 75006 / US
02 / Bryant, Frank Randolph
2125 Crestwood
Denton, Texas 76201 / US
[1999/01]
Representative(s)Driver, Virginia Rozanne, et al
Page White & Farrer Limited
Bedford House
21A John Street
London WC1N 2BF / GB
[N/P]
Former [2004/35]Driver, Virginia Rozanne, et al
Page White & Farrer 54 Doughty Street
London WC1N 2LS / GB
Former [1999/01]Palmer, Roger, et al
PAGE, WHITE & FARRER 54 Doughty Street
London WC1N 2LS / GB
Application number, filing date98304874.519.06.1998
[1999/01]
Priority number, dateUS1997088134224.06.1997         Original published format: US 881342
[1999/01]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0887857
Date:30.12.1998
Language:EN
[1998/53]
Type: B1 Patent specification 
No.:EP0887857
Date:18.10.2006
Language:EN
[2006/42]
Search report(s)(Supplementary) European search report - dispatched on:EP05.10.1998
ClassificationIPC:H01L21/8244, H01L27/11
[1999/01]
CPC:
H10B10/00 (EP,US); H10B10/125 (EP,US); Y10S257/903 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [1999/36]
Former [1999/01]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Herstellungsverfahren eines statischen Speichers mit wahlfreiem Zugriff und Struktur[1999/01]
English:Method of making an sram cell and structure[1999/01]
French:Procédé de fabrication d'une mémoire à accès aléatoire de type statique et structure[1999/01]
Examination procedure10.06.1999Examination requested  [1999/32]
02.05.2005Despatch of a communication from the examining division (Time limit: M06)
10.11.2005Reply to a communication from the examining division
16.01.2006Communication of intention to grant the patent
12.05.2006Fee for grant paid
12.05.2006Fee for publishing/printing paid
Opposition(s)19.07.2007No opposition filed within time limit [2007/42]
Fees paidRenewal fee
19.06.2000Renewal fee patent year 03
15.06.2001Renewal fee patent year 04
19.06.2002Renewal fee patent year 05
16.06.2003Renewal fee patent year 06
18.05.2004Renewal fee patent year 07
08.04.2005Renewal fee patent year 08
14.06.2006Renewal fee patent year 09
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Lapses during opposition  TooltipIT18.10.2006
DE19.01.2007
GB19.06.2007
FR02.07.2007
[2008/44]
Former [2008/26]IT18.10.2006
DE19.01.2007
GB19.06.2007
Former [2008/15]IT18.10.2006
DE19.01.2007
Documents cited:Search[A]US5192704  (MCDAVID JAMES M [US], et al);
 [A]US5451534  (YANG MING-TZONG [TW])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.