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Extract from the Register of European Patents

EP About this file: EP0907228

EP0907228 - Gas laser, exposure apparatus and semiconductor device manufacturing method using the same [Right-click to bookmark this link]
Former [1999/14]Gas laser, exposure apparatus and device manufacturing method using the same
[2002/49]
StatusNo opposition filed within time limit
Status updated on  07.05.2004
Database last updated on 14.09.2024
Most recent event   Tooltip07.05.2004No opposition filed within time limitpublished on 23.06.2004  [2004/26]
Applicant(s)For all designated states
CANON KABUSHIKI KAISHA
30-2, 3-chome, Shimomaruko, Ohta-ku
Tokyo / JP
[N/P]
Former [1999/14]For all designated states
CANON KABUSHIKI KAISHA
30-2, 3-chome, Shimomaruko, Ohta-ku
Tokyo / JP
Inventor(s)01 / Sano, Naoto, c/o Canon K.K.
30-2, 3-chome Shimomaruko, Ohta-ku
Tokyo / JP
02 / Nagai, Yoshiyuki, c/o Canon K.K.
30-2, 3-chome Shimomaruko, Ohta-ku
Tokyo / JP
[1999/14]
Representative(s)Beresford, Keith Denis Lewis, et al
Beresford Crump LLP
16 High Holborn
London WC1V 6BX / GB
[N/P]
Former [1999/14]Beresford, Keith Denis Lewis, et al
BERESFORD & Co. 2-5 Warwick Court High Holborn
London WC1R 5DJ / GB
Application number, filing date98307966.630.09.1998
[1999/14]
Priority number, dateJP1997027125303.10.1997         Original published format: JP 27125397
[1999/14]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0907228
Date:07.04.1999
Language:EN
[1999/14]
Type: B1 Patent specification 
No.:EP0907228
Date:02.07.2003
Language:EN
[2003/27]
Search report(s)(Supplementary) European search report - dispatched on:EP28.01.1999
ClassificationIPC:H01S3/036
[1999/14]
CPC:
H01S3/036 (EP,US); H01L21/027 (KR); H01S3/2251 (EP);
H01S3/2256 (EP); H01S3/2258 (EP)
Designated contracting statesDE,   FR,   GB [1999/51]
Former [1999/14]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Gaslaser, Belichtungsapparatur sowie Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung derselben[2002/49]
English:Gas laser, exposure apparatus and semiconductor device manufacturing method using the same[2002/49]
French:Laser à gaz, appareil d'exposition et procédé de fabrication de dispositif à semiconducteur en utilisant les mêmes[2002/49]
Former [1999/14]Gaslaser, Beleuchtungsapparat sowie verfahren zur Herstellung von Geräten unter Verwendung derselben
Former [1999/14]Gas laser, exposure apparatus and device manufacturing method using the same
Former [1999/14]Laser à gaz, appareil d'exposition et procédé de fabrication de dispositif en utilisant les mêmes
Examination procedure30.08.1999Examination requested  [1999/43]
13.02.2001Despatch of a communication from the examining division (Time limit: M06)
27.09.2001Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
27.11.2001Reply to a communication from the examining division
13.11.2002Communication of intention to grant the patent
19.03.2003Fee for grant paid
19.03.2003Fee for publishing/printing paid
Opposition(s)05.04.2004No opposition filed within time limit [2004/26]
Request for further processing for:27.11.2001Request for further processing filed
28.11.2001Full payment received (date of receipt of payment)
Request granted
22.01.2002Decision despatched
Fees paidRenewal fee
25.09.2000Renewal fee patent year 03
24.09.2001Renewal fee patent year 04
25.09.2002Renewal fee patent year 05
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Documents cited:Search[A]JPH01291477  ;
 [A]WO9411932  (CYMER LASER TECH [US]) [A] 1,9,17 * page 11 - page 13; figures 1,7-9 *;
 [A]EP0794598  (CANON KK [JP], et al) [A] 1,9,17 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19900209), vol. 14, no. 73, Database accession no. (E - 887)<4016>, & JP01291477 A 19891124 (FANUC) [A] 1,9,17 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.