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EP0881672
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EP About this file: EP0881672
| EP0881672 - Isolation wall between power device [Right-click to bookmark this link] | Status | The application has been refused Status updated on 23.11.2007 Database last updated on 03.09.2024 | Most recent event Tooltip | 23.11.2007 | Refusal of application | published on 26.12.2007 [2007/52] | Applicant(s) | For all designated states STMicroelectronics S.A. 29, Boulevard Romain Rolland 92120 Montrouge / FR | [2001/51] |
| Former [1999/05] | For all designated states STMicroelectronics S.A. 7, Avenue Galliéni 94250 Gentilly / FR | ||
| Former [1998/49] | For all designated states SGS-THOMSON MICROELECTRONICS S.A. 7, Avenue Galliéni 94250 Gentilly / FR | Inventor(s) | 01 /
Duclos, Franck 2, rue de la barre 37000 Tours / FR | 02 /
Rami, Fabien 6 ter, rue Pierre de Ronsard 37230 Fondettes / FR | [1998/49] | Representative(s) | de Beaumont, Michel, et al 1, rue Champollion 38000 Grenoble / FR | [1998/49] | Application number, filing date | 98410055.2 | 22.05.1998 | [1998/49] | Priority number, date | FR19970006822 | 28.05.1997 Original published format: FR 9706822 | [1998/49] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0881672 | Date: | 02.12.1998 | Language: | FR | [1998/49] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 02.10.1998 | Classification | IPC: | H01L21/761, H01L27/08 | [1998/49] | CPC: |
H01L21/761 (EP,US);
H01L27/0814 (EP,US);
H01L27/0817 (EP,US)
| Designated contracting states | DE, FR, GB, IT [1999/32] |
| Former [1998/49] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Isolationswanne für Leistungsbauteile | [1998/49] | English: | Isolation wall between power device | [1998/49] | French: | Mur d'isolement entre composants de puissance | [1998/49] | Examination procedure | 25.05.1999 | Examination requested [1999/29] | 06.12.2004 | Despatch of a communication from the examining division (Time limit: M04) | 14.01.2005 | Reply to a communication from the examining division | 23.09.2005 | Despatch of a communication from the examining division (Time limit: M04) | 09.11.2005 | Reply to a communication from the examining division | 10.08.2007 | Despatch of communication that the application is refused, reason: substantive examination [2007/52] | 20.08.2007 | Application refused, date of legal effect [2007/52] | Fees paid | Renewal fee | 15.05.2000 | Renewal fee patent year 03 | 14.05.2001 | Renewal fee patent year 04 | 14.05.2002 | Renewal fee patent year 05 | 13.05.2003 | Renewal fee patent year 06 | 13.05.2004 | Renewal fee patent year 07 | 12.05.2005 | Renewal fee patent year 08 | 23.03.2006 | Renewal fee patent year 09 | 29.05.2007 | Renewal fee patent year 10 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [DA]EP0721218 (SGS THOMSON MICROELECTRONICS [FR]) [DA] 1; | [A] - TSUTOMU YATSUO ET AL., "A Diode Integrated High Speed Thyristor", JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS 1971 SUPPLEMENT, TOKYO, (197110), vol. 40, pages 99 - 104, XP002055120 [A] 1-4 * page 100, column R, paragraph L - page 102, column L; figure 4 * |