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EP1004139
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EP About this file: EP1004139
| EP1004139 - UNDOPED SILICON DIOXIDE AS ETCH STOP FOR SELECTIVE ETCH OF DOPED SILICON DIOXIDE [Right-click to bookmark this link] | Status | The application has been refused Status updated on 14.11.2008 Database last updated on 16.07.2024 | Most recent event Tooltip | 14.11.2008 | Refusal of application | published on 17.12.2008 [2008/51] | Applicant(s) | For all designated states Micron Technology, Inc. 8000 South Federal Way Boise, ID 83707-0006 / US | [N/P] |
| Former [2000/22] | For all designated states MICRON TECHNOLOGY, INC. 8000 South Federal Way Boise, ID 83707-0006 / US | Inventor(s) | 01 /
KO, Kei-Yu 4611 East Rockbury Court Meridian, ID 83642 / US | [2000/22] | Representative(s) | Tunstall, Christopher Stephen, et al Carpmaels & Ransford LLP One Southampton Row London WC1B 5HA / GB | [N/P] |
| Former [2006/05] | Tunstall, Christopher Stephen, et al Carpmaels & Ransford, 43-45 Bloomsbury Square London WC1A 2RA / GB | ||
| Former [2000/22] | Belcher, Simon James Urquhart-Dykes & Lord Tower House Merrion Way Leeds LS2 8PA / GB | Application number, filing date | 98906417.5 | 16.02.1998 | [2000/22] | WO1998US02826 | Priority number, date | US19970846671 | 30.04.1997 Original published format: US 846671 | [2000/22] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO9849719 | Date: | 05.11.1998 | Language: | EN | [1998/44] | Type: | A1 Application with search report | No.: | EP1004139 | Date: | 31.05.2000 | Language: | EN | The application published by WIPO in one of the EPO official languages on 05.11.1998 takes the place of the publication of the European patent application. | [2000/22] | Search report(s) | International search report - published on: | US | 05.11.1998 | (Supplementary) European search report - dispatched on: | EP | 27.12.1999 | Classification | IPC: | H01L21/302, H01L21/311, H01L21/768 | [2000/22] | CPC: |
H01L21/76802 (EP,KR,US);
H01L21/02129 (KR);
H01L21/31116 (EP,KR,US);
H01L21/31144 (KR);
H01L21/76877 (KR);
H01L21/823475 (KR)
| Designated contracting states | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE [2000/22] | Title | German: | ÄTZSTOPSCHICHT AUS UNDOTIERTEM SILIZIUM-OXID FÜR DIE SELEKTIVE ÄTZUNG VON DOTIERTEM SILIZIUM-OXID | [2000/22] | English: | UNDOPED SILICON DIOXIDE AS ETCH STOP FOR SELECTIVE ETCH OF DOPED SILICON DIOXIDE | [2000/22] | French: | DIOXYDE DE SILICIUM NON DOPE SERVANT D'ARRET D'ATTAQUE POUR ATTAQUE SELECTIVE DE DIOXYDE DE SILICIUM DOPE | [2000/22] | Entry into regional phase | 24.09.1999 | National basic fee paid | 24.09.1999 | Search fee paid | 24.09.1999 | Designation fee(s) paid | 24.09.1999 | Examination fee paid | Examination procedure | deleted | Communication of intention to grant the patent | 22.10.1998 | Request for preliminary examination filed International Preliminary Examining Authority: US | 24.09.1999 | Examination requested [2000/22] | 01.03.2002 | Despatch of a communication from the examining division (Time limit: M06) | 03.08.2002 | Reply to a communication from the examining division | 08.07.2004 | Despatch of a communication from the examining division (Time limit: M04) | 11.10.2004 | Reply to a communication from the examining division | 02.05.2005 | Date of oral proceedings | 09.08.2005 | Despatch of communication that the application is refused, reason: substantive examination [2008/51] | 16.10.2008 | Application refused, date of legal effect [2008/51] | Appeal following examination | 07.10.2005 | Appeal received No. T0218/06 | 16.12.2005 | Statement of grounds filed | 16.10.2008 | Result of appeal procedure: the application was withdrawn | 06.11.2008 | Date of oral proceedings | Fees paid | Renewal fee | 24.09.1999 | Renewal fee patent year 03 | 26.02.2001 | Renewal fee patent year 04 | 25.02.2002 | Renewal fee patent year 05 | 19.03.2003 | Renewal fee patent year 06 | 07.01.2004 | Renewal fee patent year 07 | 31.12.2004 | Renewal fee patent year 08 | 14.02.2006 | Renewal fee patent year 09 | 14.02.2007 | Renewal fee patent year 10 | 13.02.2008 | Renewal fee patent year 11 | Penalty fee | Additional fee for renewal fee | 28.02.2003 | 06 M06 Fee paid on 19.03.2003 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY]US4807016 (DOUGLAS MONTE A [US]) [X] 1-9,11-15,17 * the whole document * [Y] 10,16; | [X]US5037777 (MELE THOMAS C [US], et al) [X] 1 * column 4, lines 21-66; figure 3 *; | [X]EP0496614 (NEC CORP [JP]) [X] 1 * column 3, line 41 - column 4, line 27 *; | [X]EP0465044 (AMERICAN TELEPHONE & TELEGRAPH [US]) [X] 1 * column 4, line 37 - line 47 *; | [Y]EP0763850 (APPLIED MATERIALS INC [US]) [Y] 10,16 * claims 1,2,20 *; | [A] - HOEK VAN DEN W G M ET AL, "ISOTROPIC PLASMA ETCHING OF DOPED AND UNDOPED SILICON DIOXIDE FOR CONTACT HOLES AND VIAS", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 7, no. 3, PART 01, ISSN 0734-2101, page 670-675, XP000126078 [A] * the whole document * DOI: http://dx.doi.org/10.1116/1.575863 | International search | [A]US5286344 (BLALOCK GUY [US], et al); | [A]US5366590 (KADOMURA SHINGO [JP]); | [A]US5423945 (MARKS JEFFREY [US], et al); | [YP]US5677227 (YANG FU-LIANG [TW], et al); | [YP]US5626716 (BOSCH WILLIAM F [US], et al) |