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Extract from the Register of European Patents

EP About this file: EP1035568

EP1035568 - Method of plasma processing [Right-click to bookmark this link]
Former [2000/37]METHOD OF PLASMA PROCESSING
[2006/17]
StatusNo opposition filed within time limit
Status updated on  07.07.2007
Database last updated on 16.09.2024
Most recent event   Tooltip21.11.2008Change - lapse in a contracting state
Updated state(s): FR		published on 24.12.2008  [2008/52]
Applicant(s)For all designated states
TOKYO ELECTRON LIMITED
3-6 Akasaka, 5-chome, Minato-ku
Tokyo 107-8481 / JP
[2006/35]
Former [2000/37]For all designated states
Tokyo Electron Limited
3-6 Akasaka, 5-chome, Minato-ku
Tokyo 107-8481 / JP
Inventor(s)01 / FUKIAGE, Noriaki, 103, Tokyo Electron
Sakuragaokaryo, 1-56-1, Sakuragaoka
Tama-shi, Tokyo 206-0013 / JP
[2000/37]
Representative(s)Liesegang, Eva
Boehmert & Boehmert
Anwaltspartnerschaft mbB
Pettenkoferstrasse 22
80336 München / DE
[N/P]
Former [2000/37]Liesegang, Eva
Forrester & Boehmert, Franz-Joseph-Strasse 38
80801 München / DE
Application number, filing date98953048.013.11.1998
[2000/37]
WO1998JP05131
Priority number, dateJP1997033629420.11.1997         Original published format: JP 33629497
[2000/37]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO9927574
Date:03.06.1999
Language:EN
[1999/22]
Type: A1 Application with search report 
No.:EP1035568
Date:13.09.2000
Language:EN
The application published by WIPO in one of the EPO official languages on 03.06.1999 takes the place of the publication of the European patent application.
[2000/37]
Type: B1 Patent specification 
No.:EP1035568
Date:30.08.2006
Language:EN
[2006/35]
Search report(s)International search report - published on:JP03.06.1999
(Supplementary) European search report - dispatched on:EP20.12.2000
ClassificationIPC:H01L21/314, H01L21/768, H01L23/532
[2001/05]
CPC:
C23C16/56 (EP,KR,US); H01L21/02274 (EP,KR,US); C23C16/30 (EP,KR,US);
H01L21/0212 (EP,KR,US); H01L21/0228 (EP,KR,US); H01L21/3105 (EP,US);
H01L21/3127 (US); H01L21/76826 (EP,KR,US); H01L21/76829 (EP,KR,US);
H01L21/76801 (EP,US) (-)
Former IPC [2000/37]H01L21/314, H01L21/312
Designated contracting statesBE,   DE,   FR,   IT [2000/37]
TitleGerman:Plasma-Verfahren[2006/17]
English:Method of plasma processing[2006/17]
French:Procédé de traitement au plasma[2006/17]
Former [2000/37]PLASMA-VERFAHREN
Former [2000/37]METHOD OF PLASMA PROCESSING
Former [2000/37]PROCEDE DE TRAITEMENT AU PLASMA
Entry into regional phase19.05.2000Translation filed 
19.05.2000National basic fee paid 
19.05.2000Search fee paid 
19.05.2000Designation fee(s) paid 
19.05.2000Examination fee paid 
Examination procedure18.06.1999Request for preliminary examination filed
International Preliminary Examining Authority: JP
19.05.2000Examination requested  [2000/37]
16.07.2004Despatch of a communication from the examining division (Time limit: M06)
23.11.2004Reply to a communication from the examining division
27.03.2006Communication of intention to grant the patent
12.07.2006Fee for grant paid
12.07.2006Fee for publishing/printing paid
Opposition(s)31.05.2007No opposition filed within time limit [2007/32]
Fees paidRenewal fee
13.11.2000Renewal fee patent year 03
14.11.2001Renewal fee patent year 04
13.11.2002Renewal fee patent year 05
12.11.2003Renewal fee patent year 06
12.11.2004Renewal fee patent year 07
14.11.2005Renewal fee patent year 08
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipBE30.08.2006
FR30.08.2006
IT30.08.2006
[2008/52]
Former [2008/23]BE30.08.2006
IT30.08.2006
FR11.05.2007
Former [2008/16]BE30.08.2006
IT30.08.2006
Former [2007/29]BE30.08.2006
Documents cited:Search[YA]JPS5698469  ;
 [A]JPH05234987  ;
 [XAY]EP0696819  (IBM [US]) [X] 1-6 * column 3, line 56 - column 4, line 16 * * column 5, line 35 - column 6, line 43; figure 1 * * column 6, line 58 - column 8, line 15; figure 3 * * column 8, line 50 - column 9, line 15 * * column 9, line 52 - column 10, line 27 * [A] 7,10,11 [Y] 5,6;
 [A]EP0701283  (NEC CORP [JP]) [A] 1-4,7-9 * column 3, line 3 - line 30; figures 1A,1B * * page 4, line 48 - page 6, line 28 * * page 7, line 51 - page 8, line 37; figure 2 * * page 9, line 31 - line 51; figures 9,10 * * page 11, line 1 - line 20 * * page 13, line 20 - page 14, line 3; figures 19-21 * * page 14, line 16 - line 51; figure 24 ** page 15, line 36 - page 16, line 7 *;
 [XAY]EP0794569  (NEC CORP [JP]) [X] 1-3 * page 2, line 42 - page 3, line 26 * * page 3, line 40 - page 4, line 13 * * page 6, line 45 - page 7, line 14 * [A] 7-11 [Y] 5,6;
 [E]EP0933802  (TOKYO ELECTRON LTD [JP]) [E] 1,3,6 * column 3, line 19 - column 4, line 34; figures 1,2A-2D * * column 5, line 17 - column 7, line 13; figure 5 * * column 7, line 17 - column 8, line 8; figures 6A-7C * * column 8, line 47 - line 55 *;
 [E]EP1028457  (TOKYO ELECTRON LTD [JP]) [E] 1-5,7,8,10 * column 1, line 39 - column 3, line 1; figure 8 * * column 3, line 31 - column 6, line 37; figures 1,2A-2C,3A,3B,4,5 * * column 7, line 40 - column 8, line 17 *;
 [XA]  - FRANCZ G ET AL, "PHOTOELECTRON SPECTROSCOPY OF ION-IRRADIATED BETA-DOPED CVD DIAMOND SURFACES", THIN SOLID FILMS,CH,ELSEVIER-SEQUOIA S.A. LAUSANNE, (1995), vol. 270, no. 1/02, ISSN 0040-6090, pages 200 - 204, XP002916383 [X] 1,2 * page 201, paragraph 2 * [A] 3,4,7,8

DOI:   http://dx.doi.org/10.1016/0040-6090(95)06916-X
 [YA]  - PATENT ABSTRACTS OF JAPAN, (19811027), vol. 005, no. 168, Database accession no. (C - 077), & JP56098469 A 19810807 (TOSHIBA CORP) [Y] 1-4 * abstract * [A] 7-9
 [YA]  - ENDO K ET AL, "PREPARATION AND PROPERTIES OF FLUORINATED AMORPHOUS CARBON THIN FILMS BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, (19950417), XP000574675 [Y] 1-4 * the whole document * [A] 7-9
 [A]  - PATENT ABSTRACTS OF JAPAN, (19931216), vol. 017, no. 687, Database accession no. (E - 1478), & JP05234987 A 19930910 (FUJITSU LTD) [A] 1-4,7-9 * abstract *
International search[Y]JPH06333916  (FUJI ELECTRIC CO LTD);
 [Y]JPH0864591  (IBM);
 [A]JPH08222557  (NEC CORP);
 [Y]  - FRANCZ G., ET AL., "PHOTOELECTRON SPECTROSCOPY OF ION-IRRADIATED BETA-DOPED CVD DIAMOND SURFACES.", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE., CH, CH, (19950101), vol. 270., no. 01/02., doi:10.1016/0040-6090(95)06916-X, ISSN 0040-6090, pages 200 - 204., XP002916383

DOI:   http://dx.doi.org/10.1016/0040-6090(95)06916-X
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.