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EP0939438
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EP About this file: EP0939438
| EP0939438 - Method for forming trench capacitors with doped portions in an integrated circuit [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 25.12.2009 Database last updated on 27.07.2024 | Most recent event Tooltip | 25.12.2009 | Application deemed to be withdrawn | published on 27.01.2010 [2010/04] | Applicant(s) | For all designated states Infineon Technologies AG St.-Martin-Strasse 53 81669 München / DE | [2005/26] |
| Former [1999/35] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE | Inventor(s) | 01 /
Hoepfner, Joachim Magdalenenweg 5 82152 Planegg / DE | [1999/35] | Representative(s) | Westphal, Mussgnug & Partner Patentanwälte mbB Am Riettor 5 78048 Villingen-Schwenningen / DE | [N/P] |
| Former [1999/35] | Patentanwälte Westphal, Mussgnug & Partner Waldstrasse 33 78048 Villingen-Schwenningen / DE | Application number, filing date | 99101901.9 | 29.01.1999 | [1999/35] | Priority number, date | US19980031995 | 27.02.1998 Original published format: US 31995 | [1999/35] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0939438 | Date: | 01.09.1999 | Language: | EN | [1999/35] | Type: | A3 Search report | No.: | EP0939438 | Date: | 28.11.2001 | [2001/48] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 17.10.2001 | Classification | IPC: | H01L21/8242, H01L21/223, H01L21/334 | [1999/35] | CPC: |
H01L29/66181 (EP,KR,US);
H10B12/038 (EP,US)
| Designated contracting states | DE, FR, GB, IE [2002/33] |
| Former [1999/35] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Verfahren zur Herstellung von Grabenkondensatoren mit dotierten Bereichen in einem integrierten Schaltkreis | [1999/35] | English: | Method for forming trench capacitors with doped portions in an integrated circuit | [1999/35] | French: | Méthode de formation de condensateurs ensillonnés avec des régions dopées, dans un circuit intégré | [1999/35] | Examination procedure | 24.04.2002 | Examination requested [2002/26] | 29.05.2002 | Loss of particular rights, legal effect: designated state(s) | 18.09.2002 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, FI, GR, IT, LU, MC, NL, PT, SE | 10.10.2006 | Despatch of a communication from the examining division (Time limit: M06) | 17.04.2007 | Reply to a communication from the examining division | 01.09.2009 | Application deemed to be withdrawn, date of legal effect [2010/04] | 08.09.2009 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2010/04] | Fees paid | Renewal fee | 24.01.2001 | Renewal fee patent year 03 | 25.01.2002 | Renewal fee patent year 04 | 24.01.2003 | Renewal fee patent year 05 | 22.01.2004 | Renewal fee patent year 06 | 25.01.2005 | Renewal fee patent year 07 | 28.01.2006 | Renewal fee patent year 08 | 25.01.2007 | Renewal fee patent year 09 | 15.01.2008 | Renewal fee patent year 10 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 03.07.2002 | AT M01 Not yet paid | 03.07.2002 | BE M01 Not yet paid | 03.07.2002 | CH M01 Not yet paid | 03.07.2002 | CY M01 Not yet paid | 03.07.2002 | DK M01 Not yet paid | 03.07.2002 | ES M01 Not yet paid | 03.07.2002 | FI M01 Not yet paid | 03.07.2002 | GR M01 Not yet paid | 03.07.2002 | IT M01 Not yet paid | 03.07.2002 | LU M01 Not yet paid | 03.07.2002 | MC M01 Not yet paid | 03.07.2002 | NL M01 Not yet paid | 03.07.2002 | PT M01 Not yet paid | 03.07.2002 | SE M01 Not yet paid | Additional fee for renewal fee | 31.01.2009 | 11 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US5432365 (CHIN DAE-JE [KR], et al); | [Y]US5629226 (OHTSUKI SUMITO [JP]); |