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Extract from the Register of European Patents

EP About this file: EP0989598

EP0989598 - Process for wet etching a semiconductor structure [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  06.05.2005
Database last updated on 25.09.2024
Most recent event   Tooltip06.05.2005Application deemed to be withdrawnpublished on 22.06.2005  [2005/25]
Applicant(s)For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81669 München / DE
[2001/29]
Former [2000/13]For all designated states
SIEMENS AKTIENGESELLSCHAFT
Wittelsbacherplatz 2
80333 München / DE
Inventor(s)01 / Claussen, Wilhelm, Dr.
Dorothea-Erxleben-Strasse 10
01129 Dresden / DE
02 / Vogt, Mirko, Dr.
Heinrich-Greif-Strasse 25
01217 Dresden / DE
03 / Lorenz, Barbara
Zum Kiefernhang 6
01109 Dresden / DE
04 / Sperlich, Hans-Peter
Bergmannstrasse 12
01309 Dresden / DE
05 / Penner, Klaus
Eschenweg 1
01458 Ottendorf-Okrilla / DE
[2000/13]
Representative(s)Epping - Hermann - Fischer
Patentanwaltsgesellschaft mbH
Schloßschmidstraße 5
80639 München / DE
[N/P]
Former [2001/29]Epping Hermann & Fischer
Ridlerstrasse 55
80339 München / DE
Application number, filing date99117981.315.09.1999
[2000/13]
Priority number, dateDE199814410225.09.1998         Original published format: DE 19844102
[2000/13]
Filing languageDE
Procedural languageDE
PublicationType: A2 Application without search report 
No.:EP0989598
Date:29.03.2000
Language:DE
[2000/13]
Type: A3 Search report 
No.:EP0989598
Date:17.03.2004
[2004/12]
Search report(s)(Supplementary) European search report - dispatched on:EP04.02.2004
ClassificationIPC:H01L21/308, H01L21/311, H01L21/027, H01L21/762, C09K13/06
[2004/12]
CPC:
H01L21/76224 (EP,US); H01L21/3081 (EP,US); H01L21/31111 (EP,US)
Former IPC [2000/13]H01L21/311, H01L21/033, H01L21/027
Designated contracting states[2004/50]
Former [2000/13]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Verfahren zur Nassätzung einer Halbleiterstruktur[2000/13]
English:Process for wet etching a semiconductor structure[2000/13]
French:Procédé d'attaque par voie humide d'une structure à semiconducteurs[2000/13]
Examination procedure18.09.2004Application deemed to be withdrawn, date of legal effect  [2005/25]
17.01.2005Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [2005/25]
Fees paidRenewal fee
24.09.2001Renewal fee patent year 03
23.09.2002Renewal fee patent year 04
24.09.2003Renewal fee patent year 05
Penalty fee
Penalty fee Rule 85a EPC 1973
27.10.2004DE   M01   Not yet paid
27.10.2004FR   M01   Not yet paid
27.10.2004GB   M01   Not yet paid
27.10.2004IE   M01   Not yet paid
27.10.2004IT   M01   Not yet paid
Penalty fee Rule 85b EPC 1973
27.10.2004M01   Not yet paid
Additional fee for renewal fee
30.09.200406   M06   Not yet paid
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Documents cited:Search[A]US5112762  (ANDERSON DIRK N [US], et al) [A] 1-3,5 * column 3, line 45 - column 4, line 16; figures 4A-4C *;
 [A]EP0854510  (SIEMENS AG [DE], et al) [A] 1-3 * column 1, line 3 - line 6 * * column 1, line 42 - line 55 * * column 3, line 14 - line 58; figures 1A,1B * * column 4, line 13 - line 23; figures 1E,1F * * column 4, line 24 - column 6, line 13; figures 2A-2E *;
 [A]JPS6043831  ;
 [A]US5300463  (CATHEY DAVID A [US], et al) [A] 1,3 * column 1, line 13 - line 38 * * column 1, line 63 - column 2, line 23 * * column 2, line 61 - column 3, line 19; figures 1-4 *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19850713), vol. 009, no. 169, Database accession no. (E - 328), & JP60043831 A 19850308 (NIPPON DENSHIN DENWA KOSHA) [A] 1,2,5 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.