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Extract from the Register of European Patents

EP About this file: EP0992852

EP0992852 - Pattern formation method and apparatus [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 31.07.2015 Database last updated on 06.07.2024
Most recent event Tooltip	31.07.2015	Application deemed to be withdrawn	published on 02.09.2015 [2015/36]
Applicant(s)	For all designated states NIPPON TELEGRAPH AND TELEPHONE CORPORATION 3-1, Otemachi 2-chome, Chiyoda-ku Tokyo / JP
	[N/P]
Former [2000/15]	For all designated states Nippon Telegraph and Telephone Corporation 3-1, Otemachi 2-chome, Chiyoda-ku Tokyo / JP
Inventor(s)	01 / Namatsu, Hideo, c/o Nippon Telegraph & Tel. Corp. 20-2 Nishi-Shinjuku 3-chome Shinjuku-ku, Tokyo / JP
	[2000/15]
Representative(s)	Stork Bamberger Patentanwälte PartmbB Meiendorfer Strasse 89 22145 Hamburg / DE
	[N/P]
Former [2012/07]	Stork Bamberger Patentanwälte Postfach 73 04 66 22124 Hamburg / DE
Former [2000/15]	Patentanwälte Wenzel & Kalkoff Grubesallee 26 22143 Hamburg / DE
Application number, filing date	99250313.6	09.09.1999
	[2000/15]
Priority number, date	JP19990019596	28.01.1999 Original published format: JP 1959699
	JP19980312714	04.11.1998 Original published format: JP 31271498
	JP19980254835	09.09.1998 Original published format: JP 25483598
	[2000/15]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0992852
	Date:	12.04.2000
	Language:	EN
	[2000/15]
	Type:	A3 Search report
	No.:	EP0992852
	Date:	19.07.2006
	[2006/29]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	21.06.2006
Classification	IPC:	G03F7/16, G03F7/00, H01L21/027	[2000/15]
	CPC:	H01L21/31133 (EP,US); H01L21/027 (KR); G03F7/32 (EP,US); G03F7/40 (EP,US); G03F7/405 (EP,US); H01L21/02052 (EP,US); (+) H01L21/0274 (EP,US); Y10S134/902 (EP,US) (-)
Designated contracting states	DE, FR, GB [2007/18]
Former [2000/15]	AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE
Title	German:	Verfahren zur Herstellung von Mustern und Apparat	[2000/15]
	English:	Pattern formation method and apparatus	[2000/15]
	French:	Méthode et appareil pour la formation de motifs	[2000/15]
Examination procedure	24.08.2006	Examination requested [2006/41]
	30.06.2008	Despatch of a communication from the examining division (Time limit: M04)
	03.11.2008	Reply to a communication from the examining division
	01.04.2015	Application deemed to be withdrawn, date of legal effect [2015/36]
	29.04.2015	Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2015/36]
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 30.06.2008
Fees paid	Renewal fee
	27.09.2001	Renewal fee patent year 03
	28.09.2002	Renewal fee patent year 04
	29.09.2003	Renewal fee patent year 05
	29.09.2004	Renewal fee patent year 06
	26.08.2005	Renewal fee patent year 07
	28.09.2006	Renewal fee patent year 08
	27.09.2007	Renewal fee patent year 09
	29.03.2008	Renewal fee patent year 10
	26.09.2009	Renewal fee patent year 11
	29.09.2010	Renewal fee patent year 12
	29.09.2011	Renewal fee patent year 13
	27.09.2012	Renewal fee patent year 14
	27.09.2013	Renewal fee patent year 15
	Penalty fee
	Additional fee for renewal fee
	30.09.2014	16 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XAY]US5326672 (TANAKA TOSHIHIKO [JP], et al) [X] 1,2,6,7,18 * column 1, line 5 - line 17 * * column 1, line 50 - column 2, line 11; figures 9-11 * * column 2, line 67 - column 3, line 29; figures 1-3 * * column 4, line 25 - line 34 * * column 4, line 40 - column 5, line 2 * * column 7, line 10 - line 55; claim 8 * [A] 3-5,11-14,21,22 [Y] 1,2,6,7,10,15;
		[XAY]US5213619 (JACKSON DAVID P [US], et al) [X] 3-5,11-14,21,22 * column 2, line 65 - column 3, line 7 * * column 4, line 4 - line 19 * * column 4, line 33 - line 36 * * column 12, line 18 - line 53; figure 5 * * column 12, line 66 - column 13, line 1; figure 6a * * column 13, line 41 - line 45 * * column 13, line 52 - column 14, line 4; figure 6b * * column 16, line 40 - line 48 * [A] 1,2,6 [Y] 5,14;
		[XY]US5417768 (SMITH JR CHARLES W [US], et al) [X] 3,4,11-13,21,22 * column 1, line 7 - line 19 * * column 1, line 32 - line 40 * * column 1, line 50 - line 56 * * column 2, line 5 - line 26 * * column 2, line 30 - line 66 * * column 3, line 35 - line 63; figure 1 * * column 4, line 5 - line 65 * * column 5, line 3 - line 7 * * column 5, line 29 - line 56 * [Y] 1,2,5-7,14;
		[Y]JPS6377118 ;
		[A]JPH03127832 ;
		[XAY]US5185296 (MORITA KIYOYUKI [JP], et al) [X] 3,4,11,12 * column 3, line 22 - column 4, line 13 * * column 4, line 57 - column 5, line 14 * * column 5, line 47 - column 6, line 35; figures 4-6 * * column 6, line 59 - column 7, line 4 * * column 9, line 24 - line 47; figure 14 * [A] 16-20 [Y] 15;
		[A]US4944837 (NISHIKAWA MASARU [JP], et al) [A] 15-20 * column 2, line 24 - line 39 * * column 3, line 14 - line 32 * * column 3, line 45 - column 4, line 37; figures 1-3 * * column 4, line 45 - line 55 * * column 4, line 66 - column 5, line 12 * * column 6, line 10 - line 31 * * column 7, line 3 - line 34 * * column 8, line 27 - line 34 *;
		[Y] - PATENT ABSTRACTS OF JAPAN, (19880823), vol. 012, no. 310, Database accession no. (E - 648), & JP63077118 A 19880407 (FUJITSU LTD) [Y] 10 * abstract *
		[PX] - NAMATSU H ET AL, "Supercritical Drying for Nanostructure Fabrication without Pattern Collapse", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, (199905), vol. 46, no. 1-4, ISSN 0167-9317, pages 129 - 132, XP004170685 [PX] 1,2 * page 129, paragraphs 1,2 - page 130, column L * * page 131, paragraph 3.2 - page 132; figures 4-6 * DOI: http://dx.doi.org/10.1016/S0167-9317(99)00033-7
		[A] - TANAKA T ET AL, Mechanism of Resist Pattern Collapse during the Development Process, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, PAGE(S) 6059-6064, (199312), ISSN 0021-4922, XP002338117 [A] 1,2,6 * page 6059, paragraph 2 - page 6061; figures 1-7 * * page 6064; figure 4 * DOI: http://dx.doi.org/10.1143/JJAP.32.6059
		[A] - PATENT ABSTRACTS OF JAPAN, (19910826), vol. 015, no. 334, Database accession no. (E - 1104), & JP03127832 A 19910530 (MATSUSHITA ELECTRIC IND CO LTD) [A] 1,2,6,7 * abstract *
		[A] - OBER C K ET AL, "IMAGING POLYMERS WITH SUPERCRITICAL CARBON DIOXIDE", ADVANCED MATERIALS, WILEY VCH, WEINHEIM, DE, (19971103), vol. 9, no. 13, ISSN 0935-9648, pages 1039 - 1043, XP000721513 [A] 15,17,18,20 * page 1039 - page 1040, column L; table 1 * DOI: http://dx.doi.org/10.1002/adma.19970091309

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