-
EP1054444
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP1054444
| EP1054444 - Process for depositing a porous, low dielectric constant silicon oxide film [Right-click to bookmark this link] | Status | The application has been refused Status updated on 15.10.2010 Database last updated on 31.08.2024 | Most recent event Tooltip | 15.10.2010 | Refusal of application | published on 17.11.2010 [2010/46] | Applicant(s) | For all designated states Applied Materials, Inc. P.O. Box 450A Santa Clara, California 95052 / US | [N/P] |
| Former [2000/47] | For all designated states Applied Materials, Inc. P.O. Box 450A Santa Clara, California 95052 / US | Inventor(s) | 01 /
Geiger, Fabrice 29 avenue de la Pleine Fleurie 38240 Meylan / FR | 02 /
Gaillard, Frederic rue des Tallifardieres 38500 Voiron / FR | [2000/47] | Representative(s) | Kirschner, Klaus Dieter, et al Puschmann Borchert Bardehle Patentanwälte Partnerschaft Postfach 10 12 31 80086 München / DE | [N/P] |
| Former [2008/28] | Kirschner, Klaus Dieter, et al Puschmann & Borchert Patentanwälte Bajuwarenring 21 82041 Oberhaching / DE | ||
| Former [2006/40] | Kirschner, Klaus Dieter, et al Kirschner Patentanwaltskanzlei Südliche Münchnerstrasse 53 82031 Grünwald / DE | ||
| Former [2000/47] | Kirschner, Klaus Dieter, Dipl.-Phys., et al Schneiders & Behrendt Rechtsanwälte - Patentanwälte Sollner Strasse 38 81479 München / DE | Application number, filing date | 99401202.9 | 19.05.1999 | [2000/47] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1054444 | Date: | 22.11.2000 | Language: | EN | [2000/47] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 27.10.1999 | Classification | IPC: | H01L21/316 | [2000/47] | CPC: |
H01L21/02126 (EP);
C23C16/402 (EP);
H01L21/02203 (EP);
H01L21/02271 (EP);
H01L21/02304 (EP);
H01L21/02362 (EP)
| Designated contracting states | DE, GB [2001/32] |
| Former [2000/47] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Abscheidungsverfahren für einen porösen SiO2-Film mit einer niedrigen Dielektrizitätskonstante | [2000/47] | English: | Process for depositing a porous, low dielectric constant silicon oxide film | [2000/47] | French: | Procédé de dépôt d'une couche poreuse de oxyde de silicium ayant une constante dielectrique faible | [2000/47] | Examination procedure | 21.05.2001 | Examination requested [2001/31] | 23.05.2001 | Loss of particular rights, legal effect: designated state(s) | 11.09.2001 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, FI, FR, GR, IE, IT, LI, LU, MC, NL, PT, SE | 13.09.2006 | Despatch of a communication from the examining division (Time limit: M06) | 02.05.2007 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 11.06.2007 | Reply to a communication from the examining division | 22.02.2008 | Despatch of a communication from the examining division (Time limit: M04) | 12.06.2008 | Reply to a communication from the examining division | 03.06.2010 | Date of oral proceedings | 25.06.2010 | Despatch of communication that the application is refused, reason: substantive examination [2010/46] | 25.06.2010 | Minutes of oral proceedings despatched | 05.07.2010 | Application refused, date of legal effect [2010/46] | Request for further processing for: | 11.06.2000 | Request for further processing filed | 11.06.2007 | Full payment received (date of receipt of payment) Request granted | 22.06.2007 | Decision despatched | Fees paid | Renewal fee | 30.05.2001 | Renewal fee patent year 03 | 31.05.2002 | Renewal fee patent year 04 | 02.06.2003 | Renewal fee patent year 05 | 05.05.2004 | Renewal fee patent year 06 | 13.05.2005 | Renewal fee patent year 07 | 27.03.2006 | Renewal fee patent year 08 | 07.05.2007 | Renewal fee patent year 09 | 18.03.2008 | Renewal fee patent year 10 | 07.05.2009 | Renewal fee patent year 11 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 26.06.2001 | AT M01 Not yet paid | 26.06.2001 | BE M01 Not yet paid | 26.06.2001 | CH M01 Not yet paid | 26.06.2001 | CY M01 Not yet paid | 26.06.2001 | DK M01 Not yet paid | 26.06.2001 | ES M01 Not yet paid | 26.06.2001 | FI M01 Not yet paid | 26.06.2001 | FR M01 Not yet paid | 26.06.2001 | GR M01 Not yet paid | 26.06.2001 | IE M01 Not yet paid | 26.06.2001 | IT M01 Not yet paid | 26.06.2001 | LU M01 Not yet paid | 26.06.2001 | MC M01 Not yet paid | 26.06.2001 | NL M01 Not yet paid | 26.06.2001 | PT M01 Not yet paid | 26.06.2001 | SE M01 Not yet paid | Additional fee for renewal fee | 31.05.2010 | 12 M06 Not yet paid |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]US5804509 (CHO GYUNG-SU [KR]) [X] 1,5,6 * column 2, line 50 - column 4, line 21 *; | [X]JPH1197533 ; | [X]EP0822585 (APPLIED MATERIALS INC [US]) [X] 20 * the whole document *; | [A]US5472913 (HAVEMANN ROBERT H [US], et al) [A] 1,4,7 * column 4, line 15 - column 6, line 25 *; | [A]US5271972 (KWOK KURT [US], et al) [A] * the whole document *; | [A]US5426076 (MOGHADAM FARHAD K [US]) [A] * column 2, line 19 - line 41 * | [X] - PATENT ABSTRACTS OF JAPAN, (19990730), vol. 1999, no. 09, & JP11097533 A 19990409 (HITACHI LTD) [X] 1 * abstract * |