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EP0974160
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EP About this file: EP0974160
| EP0974160 - PROCESS OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A BURIED CHANNEL FIELD EFFECT TRANSISTOR [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 11.08.2006 Database last updated on 10.05.2025 | Most recent event Tooltip | 11.08.2006 | Application deemed to be withdrawn | published on 13.09.2006 [2006/37] | Applicant(s) | For all designated states Koninklijke Philips Electronics N.V. Groenewoudseweg 1 5621 BA Eindhoven / NL | [N/P] |
| Former [2000/04] | For all designated states Koninklijke Philips Electronics N.V. Groenewoudseweg 1 5621 BA Eindhoven / NL | Inventor(s) | 01 /
FRIJLINK, Peter Prof. Holstlaan 6 NL-5656 AA Eindhoven / NL | 02 /
OSZUSTOWICZ, Jean-Luc Prof. Holstlaan 6 NL-5656 AA Eindhoven / NL | [2000/04] | Representative(s) | van Oudheusden-Perset, Laure E., et al Philips Intellectual Property & Standards High Tech Campus 44 5656 AE Eindhoven / FR | [N/P] |
| Former [2006/17] | van Oudheusden-Perset, Laure E., et al Société Civile SPID 156, Boulevard Haussmann 75008 Paris / FR | ||
| Former [2005/09] | Charpail, François, et al Société Civile S.P.I.D. 156, Boulevard Haussmann 75008 Paris / FR | ||
| Former [2000/04] | Lottin, Claudine Philips Corporate Intellectual Property, 156 Boulevard Haussmann 75008 Paris / FR | Application number, filing date | 99900239.7 | 21.01.1999 | [2000/04] | WO1999IB00094 | Priority number, date | EP19980400289 | 09.02.1998 Original published format: EP 98400289 | [2000/04] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO9940618 | Date: | 12.08.1999 | Language: | EN | [1999/32] | Type: | A1 Application with search report | No.: | EP0974160 | Date: | 26.01.2000 | Language: | EN | The application published by WIPO in one of the EPO official languages on 12.08.1999 takes the place of the publication of the European patent application. | [2000/04] | Search report(s) | International search report - published on: | SE | 12.08.1999 | Classification | IPC: | H01L21/336, H01L29/78 | [2000/04] | CPC: |
H10D30/015 (EP,US);
H01L21/28587 (EP,US);
H10D30/4732 (EP,US)
| Designated contracting states | DE, FR, GB, NL [2000/04] | Title | German: | VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENT MIT EINEM BEGRABENEN KANAL RELDEFFEKTTRANSISTOR | [2000/04] | English: | PROCESS OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A BURIED CHANNEL FIELD EFFECT TRANSISTOR | [2000/04] | French: | PROCEDE DE FABRICATION D'UN DISPOSITIF A SEMI-CONDUCTEUR COMPRENANT UN TRANSISTOR A EFFET DE CHAMP A CANAL ENTERRE | [2000/04] | Entry into regional phase | 09.11.1999 | National basic fee paid | 09.11.1999 | Designation fee(s) paid | 14.02.2000 | Examination fee paid | Examination procedure | 14.02.2000 | Examination requested [2000/15] | 13.09.2005 | Despatch of a communication from the examining division (Time limit: M06) | 24.03.2006 | Application deemed to be withdrawn, date of legal effect [2006/37] | 28.04.2006 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2006/37] | Fees paid | Renewal fee | 31.01.2001 | Renewal fee patent year 03 | 31.01.2002 | Renewal fee patent year 04 | 31.01.2003 | Renewal fee patent year 05 | 02.02.2004 | Renewal fee patent year 06 | 31.01.2005 | Renewal fee patent year 07 | 31.01.2006 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]JP10189618 ; | [A]US4984036 (SAKAMOTO SHINICHI [JP], et al); | [X]US5270228 (ISHIKAWA TAKAHIDE [JP]); | [X]US5364816 (BOOS J BRAD [US], et al); | [X]US5534452 (NAKANISHI MAMIKO [JP], et al); | [A]US5539228 (CHI TOM Y [US]) |