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EP1127175
European procedure
Extract from the Register of European Patents
EP About this file: EP1127175
| EP1127175 - PROCESS FOR PREPARING DEFECT FREE SILICON CRYSTALS WHICH ALLOWS FOR VARIABILITY IN PROCESS CONDITIONS [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 20.06.2003 Database last updated on 09.09.2024 | Most recent event Tooltip | 30.10.2009 | Change - representative | published on 02.12.2009 [2009/49] | Applicant(s) | For all designated states MEMC Electronic Materials, Inc. 501 Pearl Drive, P.O. Box 8 St. Peters Missouri 63376 / US | [N/P] |
| Former [2001/35] | For all designated states MEMC Electronic Materials, Inc. 501 Pearl Drive, P.O. Box 8 St. Peters, Missouri 63376 / US | Inventor(s) | 01 /
FALSTER, Robert, J. Via Caradosso, 11 I-20123 Milano / IT | 02 /
VORONKOV, Vladimir ul. 26 Bakinskih Comissarov, 3-1-454 Moscow, 117571 / RU | 03 /
Mutti Paoloc/o MEMC Electronic Materials Inc 501 Pearl Drive,PO Box 8Mail Zone MZ33 St Peters, MO 63376 / US | [2001/35] | Representative(s) | Eyles, Christopher Thomas W.P. Thompson & Co. 55 Drury Lane London WC2B 5SQ / GB | [N/P] |
| Former [2009/49] | Eyles, Christopher Thomas W.P. Thompson & Co. 55 Drury Lane London WC2B 5SQ / GB | ||
| Former [2001/35] | Eyles, Christopher Thomas W.P. THOMPSON & CO. Celcon House 289-293 High Holborn London WC1V 7HU / GB | Application number, filing date | 99930653.3 | 25.06.1999 | [2001/35] | WO1999US14287 | Priority number, date | US19980104087P | 14.10.1998 Original published format: US 104087 P | US19990117623P | 28.01.1999 Original published format: US 117623 P | [2001/35] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO0022196 | Date: | 20.04.2000 | Language: | EN | [2000/16] | Type: | A1 Application with search report | No.: | EP1127175 | Date: | 29.08.2001 | Language: | EN | The application published by WIPO in one of the EPO official languages on 20.04.2000 takes the place of the publication of the European patent application. | [2001/35] | Type: | B1 Patent specification | No.: | EP1127175 | Date: | 14.08.2002 | Language: | EN | [2002/33] | Search report(s) | International search report - published on: | EP | 20.04.2000 | Classification | IPC: | C30B15/00, C30B29/06 | [2001/35] | CPC: |
C30B29/06 (EP);
C30B15/00 (KR);
C30B15/203 (EP);
C30B15/206 (EP);
C30B33/00 (EP)
| Designated contracting states | DE, FR, GB, IT [2002/33] |
| Former [2001/35] | DE, FR, GB, IT | Title | German: | VERFAHREN ZUR HERSTELLUNG FEHLERFREIER SILIZIUMKRISTALLE, WELCHES VARIABLE VERFAHRENSBEDINGUNGEN ZULÄSST | [2001/46] | English: | PROCESS FOR PREPARING DEFECT FREE SILICON CRYSTALS WHICH ALLOWS FOR VARIABILITY IN PROCESS CONDITIONS | [2001/35] | French: | PROCEDE DE PREPARATION DE CRISTAUX DE SILICIUM EXEMPTS DE DEFAUTS PERMETTANT UNE CERTAINE VARIABILITE DES CONDITIONS DE TRAITEMENT | [2001/35] |
| Former [2001/35] | VERFAHREN ZUR HERSTELLUNG FEHLERFREIER SILIZIUMKRISTALLEN, BEI DENEN DIE VERFAHRENSBEDINGUNGEN ABWEICHEN KÖNNEN | Entry into regional phase | 01.05.2001 | National basic fee paid | 01.05.2001 | Designation fee(s) paid | 01.05.2001 | Examination fee paid | Examination procedure | 09.05.2000 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 01.05.2001 | Examination requested [2001/35] | 27.06.2001 | Amendment by applicant (claims and/or description) | 29.10.2001 | Despatch of communication of intention to grant (Approval: Yes) | 13.02.2002 | Communication of intention to grant the patent | 10.05.2002 | Fee for grant paid | 10.05.2002 | Fee for publishing/printing paid | Opposition(s) | 15.05.2003 | No opposition filed within time limit [2003/32] | Fees paid | Renewal fee | 03.05.2001 | Renewal fee patent year 03 | 12.06.2002 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [PX]WO9845507 (MEMC ELECTRONIC MATERIALS [US]) [PX] 1,2 * page 33, line 21 - page 34, line 30; example 9 *; | [A]JPH02180789 ; | [A]DE4414947 (WACKER CHEMITRONIC [DE]); | [A]DE19806045 (SAMSUNG ELECTRONICS CO LTD [KR]); | [A]US5779791 (KORB HAROLD W [US], et al) [A] 1,22 * column 2, line 56 - line 62 *; | [A]EP0747513 (SHINETSU HANDOTAI KK [JP]) | [A] - PATENT ABSTRACTS OF JAPAN, (19901002), vol. 014, no. 456, Database accession no. (C - 0765), & JP02180789 A 19900713 (KAWASAKI STEEL CORP) [A] 1,22 * abstract * |