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EP1099014
European procedure
Extract from the Register of European Patents
EP About this file: EP1099014
| EP1099014 - METHOD AND DEVICE FOR PRODUCING AT LEAST ONE SILICON CARBIDE MONOCRYSTAL [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 31.01.2003 Database last updated on 09.07.2024 | Most recent event Tooltip | 31.01.2003 | No opposition filed within time limit | published on 19.03.2003 [2003/12] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [2001/20] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE | Inventor(s) | 01 /
STEIN, Rene Waldstrasse 7a D-91341 Röttenbach / DE | 02 /
VÖLKL, Johannes Hoferstrasse 4 D-91056 Erlangen / DE | 03 /
KUHN, Harald Forchheimerstrasse 5 D-91056 Erlangen / DE | 04 /
RUPP, Roland Am Wasserturm 35 D-91207 Lauf / DE | [2001/20] | Application number, filing date | 99942775.0 | 05.07.1999 | [2001/20] | WO1999DE02066 | Priority number, date | DE1998131556 | 14.07.1998 Original published format: DE 19831556 | [2001/20] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | WO0004212 | Date: | 27.01.2000 | Language: | DE | [2000/04] | Type: | A1 Application with search report | No.: | EP1099014 | Date: | 16.05.2001 | Language: | DE | The application published by WIPO in one of the EPO official languages on 27.01.2000 takes the place of the publication of the European patent application. | [2001/20] | Type: | B1 Patent specification | No.: | EP1099014 | Date: | 27.03.2002 | Language: | DE | [2002/13] | Search report(s) | International search report - published on: | EP | 27.01.2000 | Classification | IPC: | C30B23/00, C30B29/36 | [2001/20] | CPC: |
C30B23/00 (EP,US);
C30B29/36 (EP,US);
Y10T117/10 (EP,US);
Y10T117/1092 (EP,US)
| Designated contracting states | CH, DE, FR, IT, LI, SE [2002/13] |
| Former [2001/20] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG MINDESTENS EINES SiC-EINKRISTALLS | [2001/20] | English: | METHOD AND DEVICE FOR PRODUCING AT LEAST ONE SILICON CARBIDE MONOCRYSTAL | [2001/20] | French: | DISPOSITIF ET PROCEDE POUR LA PRODUCTION D'AU MOINS UN MONOCRISTAL DE SiC | [2001/20] | Entry into regional phase | 23.11.2000 | National basic fee paid | 23.11.2000 | Designation fee(s) paid | 23.11.2000 | Examination fee paid | Examination procedure | 13.12.1999 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 24.11.2000 | Examination requested [2001/20] | 16.07.2001 | Despatch of communication of intention to grant (Approval: Yes) | 26.09.2001 | Communication of intention to grant the patent | 17.12.2001 | Fee for grant paid | 17.12.2001 | Fee for publishing/printing paid | Opposition(s) | 30.12.2002 | No opposition filed within time limit [2003/12] | Fees paid | Renewal fee | 20.07.2001 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]DE4310745 (SIEMENS AG [DE]); | [AD]WO9423096 (SIEMENS AG [DE], et al) [AD] 1,13 * the whole document *; | [AD]US5667587 (GLASS ROBERT C [US], et al); | [A]US5683507 (BARRETT DONOVAN L [US], et al) |