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EP About this file: EP1145303

EP1145303 - METHOD AND DEVICE FOR OPTICALLY MONITORING PROCESSES FOR MANUFACTURING MICROSTRUCTURED SURFACES IN THE PRODUCTION OF SEMICONDUCTORS [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  11.09.2015
Database last updated on 24.08.2024
Most recent event   Tooltip11.09.2015Application deemed to be withdrawnpublished on 14.10.2015  [2015/42]
Applicant(s)For:DE  FR  IE 
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27c
80686 München / DE
[N/P]
Former [2009/51]For:DE  FR  IE 
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27c
80686 München / DE
Former [2009/33]For:DE  FR  IE 
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27c
80636 München / DE
Former [2008/26]For:DE  FR  IE 
Qimonda Dresden GmbH & Co. oHG
Königsbrücker Strasse 180
01099 Dresden / DE
For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27c
80686 München / DE
Former [2008/12]For all designated states
Qimonda Dresden GmbH & Co. oHG
Königsbrücker Strasse 180
01099 Dresden / DE
For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27c
80686 München / DE
Former [2007/03]For all designated states
Infineon Technologies SC300 GmbH & Co. KG
Königsbrücker Strasse 180
01099 Dresden / DE
For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27c
80686 München / DE
Former [2003/47]For all designated states
Infineon Technologies SC300 GmbH & Co. KG
Königsbrücker Strasse 180
01099 Dresden / DE
For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27 c
80686 München / DE
Former [2002/01]For all designated states
Infineon Technologies SC300 GmbH & Co. KG
Königsbrücker Strasse 180
01099 Dresden / DE
For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Leonrodstrasse 54
80636 München / DE
Former [2001/42]For all designated states
Semiconductor 300 GmbH & Co. KG
Manfred-v.-Ardenne-Ring 20, Building D
01099 Dresden / DE
For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Leonrodstrasse 54
80636 München / DE
Inventor(s)01 / BENESCH, Norbert
Herrnhuettestrasse 67
D-90411 Nuernberg / DE
02 / SCHNEIDER, Claus
Am Sandberg 33
D-91088 Bubenreuth / DE
03 / PFITZNER, Lothar
Spardorferstrasse 52
D-91054 Erlangen / DE
 [2001/42]
Representative(s)Epping - Hermann - Fischer
Patentanwaltsgesellschaft mbH
Schloßschmidstraße 5
80639 München / DE
[N/P]
Former [2008/30]Epping - Hermann - Fischer
Patentanwaltsgesellschaft mbH Ridlerstrasse 55
80339 München / DE
Former [2004/04]Epping, Hermann, Fischer
Patentanwaltsgesellschaft mbH Ridlerstrasse 55
80339 München / DE
Former [2001/42]Epping, Wilhelm, Dipl.-Ing.
Epping Hermann & Fischer Ridlerstrasse 55
80339 München / DE
Application number, filing date99961050.402.12.1999
[2001/42]
WO1999EP09410
Priority number, dateDE1998105598304.12.1998         Original published format: DE 19855983
DE1999102261417.05.1999         Original published format: DE 19922614
[2001/42]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO0035002
Date:15.06.2000
Language:DE
[2000/24]
Type: A1 Application with search report 
No.:EP1145303
Date:17.10.2001
Language:DE
The application published by WIPO in one of the EPO official languages on 15.06.2000 takes the place of the publication of the European patent application.
[2001/42]
Search report(s)International search report - published on:EP15.06.2000
ClassificationIPC:H01L21/66, G01N21/47
[2001/42]
CPC:
H01L22/34 (EP,US); G01N21/21 (EP,US); G03F7/70491 (EP,US);
G03F7/70616 (EP,US); H01L22/12 (EP,US)
Designated contracting statesDE,   FR,   GB,   IE [2004/21]
Former [2001/42]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:VERFAHREN UND VORRICHTUNG ZUR OPTISCHEN KONTROLLE VON FERTIGUNGSPROZESSEN FEINSTRUKTURIERTER OBERFLÄCHEN IN DER HALBLEITERFERTIGUNG[2001/42]
English:METHOD AND DEVICE FOR OPTICALLY MONITORING PROCESSES FOR MANUFACTURING MICROSTRUCTURED SURFACES IN THE PRODUCTION OF SEMICONDUCTORS[2001/42]
French:DISPOSITIF ET PROCEDE DE CONTROLE OPTIQUE DE PROCESSUS DE FABRICATION DE SURFACES MICROSTRUCTUREES DANS LA PRODUCTION DE SEMI-CONDUCTEURS[2001/42]
Entry into regional phase29.05.2001National basic fee paid 
29.05.2001Designation fee(s) paid 
29.05.2001Examination fee paid 
Examination procedure04.07.2000Request for preliminary examination filed
International Preliminary Examining Authority: EP
29.05.2001Examination requested  [2001/42]
04.01.2006Despatch of a communication from the examining division (Time limit: M06)
14.07.2006Reply to a communication from the examining division
18.11.2010Despatch of a communication from the examining division (Time limit: M06)
20.05.2011Reply to a communication from the examining division
04.11.2014Despatch of a communication from the examining division (Time limit: M06)
16.05.2015Application deemed to be withdrawn, date of legal effect  [2015/42]
11.06.2015Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2015/42]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  04.01.2006
Fees paidRenewal fee
31.12.2001Renewal fee patent year 03
23.12.2002Renewal fee patent year 04
29.12.2003Renewal fee patent year 05
23.12.2004Renewal fee patent year 06
28.12.2005Renewal fee patent year 07
27.12.2006Renewal fee patent year 08
11.12.2007Renewal fee patent year 09
23.04.2009Renewal fee patent year 10
22.12.2009Renewal fee patent year 11
15.12.2010Renewal fee patent year 12
23.12.2011Renewal fee patent year 13
20.12.2012Renewal fee patent year 14
20.12.2013Renewal fee patent year 15
22.12.2014Renewal fee patent year 16
Penalty fee
Additional fee for renewal fee
31.12.200810   M06   Fee paid on   23.04.2009
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Cited inInternational search[A]US4964726  (KLEINKNECHT HANS P [CH], et al) [A] 1,11 * column 7, line 1 - line 12 *;
 [A]EP0874396  (APPLIED MATERIALS INC [US]) [A] 3 * the whole document *;
 [XY]  - BISCHOFF J., ET AL., "OPTICAL SCATTEROMETRY OF QUARTER MICRON PATTERNS USING NEURAL REGRESSION.", Optomechatronic micro/nano devices and components III : 8 - 10 October 2007, Lausanne, Switzerland, SPIE, Bellingham, Wash., Bellingham, Wash., (19980101), vol. 3332., doi:10.1117/12.308764, ISBN 978-1-62841-730-2, pages 526 - 537., XP000890149 [X] 1-7,11-16,18,20 * the whole document * [Y] 17,19

DOI:   http://dx.doi.org/10.1117/12.308764
 [Y]  - COULOMBE S. A., ET AL., "ELLIPSOMETRIC-SCATTEROMETRIC FOR SUB-0.1 MUM CD MEASUREMENTS.", Optomechatronic micro/nano devices and components III : 8 - 10 October 2007, Lausanne, Switzerland, SPIE, Bellingham, Wash., Bellingham, Wash., (19980101), vol. 3332., doi:10.1117/12.308737, ISBN 978-1-62841-730-2, pages 282 - 293., XP000890148 [Y] 17,19 * the whole document *

DOI:   http://dx.doi.org/10.1117/12.308737
 [X]  - KALLIONIEMI I., SAARINEN J., OJA E., "OPTICAL SCATTEROMETRY OF SUBWAVELENGTH DIFFRACTION GRATINGS: NEURAL-NETWORK APPROACH.", Applied Optics, Optical Society of America, WASHINGTON, DC; US, WASHINGTON, DC; US, (19980901), vol. 37., no. 25., doi:10.1364/AO.37.005830, ISSN 0003-6935, pages 5830 - 5835., XP000890173 [X] 1-7,11-16,18,20 * the whole document *

DOI:   http://dx.doi.org/10.1364/AO.37.005830
 [A]  - BUSHMAN S., FARRER S., "SCATTEROMETRY MEASUREMENTS FOR PROCESS MONITORING OF POLYSILICON GATE ETCH.", Optomechatronic micro/nano devices and components III : 8 - 10 October 2007, Lausanne, Switzerland, SPIE, Bellingham, Wash., Bellingham, Wash., (19970101), vol. 3213., doi:10.1117/12.284624, ISBN 978-1-62841-730-2, pages 79 - 90., XP000890146 [A] 1,11 * page 80, paragraph 2 *

DOI:   http://dx.doi.org/10.1117/12.284624
 [A]  - MURNANE M. R., ET AL., "DEVELOPED PHOTORESIST METROLOGY USING SCATTEROMETRY.", Optomechatronic micro/nano devices and components III : 8 - 10 October 2007, Lausanne, Switzerland, SPIE, Bellingham, Wash., Bellingham, Wash., (19940101), vol. 2196., doi:10.1117/12.174160, ISBN 978-1-62841-730-2, pages 47 - 59., XP000890152 [A] 1-20 *"4. DATA ANALYSES"*

DOI:   http://dx.doi.org/10.1117/12.174160
 [PA]  - BENESCH N., ET AL., "APPLICATION AND COST ANALYSIS OF SCATTEROMETRY FOR INTEGRATED METROLOGY.", Optomechatronic micro/nano devices and components III : 8 - 10 October 2007, Lausanne, Switzerland, SPIE, Bellingham, Wash., Bellingham, Wash., (19990101), vol. 3743., doi:10.1117/12.346929, ISBN 978-1-62841-730-2, pages 25 - 32., XP000890150 [PA] 1-20 * the whole document *

DOI:   http://dx.doi.org/10.1117/12.346929
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.