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EP About this file: EP1158076

EP1158076 - PRODUCTION METHOD FOR SILICON SINGLE CRYSTAL AND PRODUCTION DEVICE FOR SINGLE CRYSTAL INGOT, AND HEAT TREATING METHOD FOR SILICON SINGLE CRYSTAL WAFER [Right-click to bookmark this link]
Status	No opposition filed within time limit Status updated on 19.09.2008 Database last updated on 14.11.2024
Most recent event Tooltip	12.06.2009	Change - representative	published on 15.07.2009 [2009/29]
Applicant(s)	For all designated states Komatsu Denshi Kinzoku Kabushiki Kaisha 25-1, Shinomiya 3-chome Hiratsuka-shi Kanagawa 254-0014 / JP
	[N/P]
Former [2007/46]	For all designated states Komatsu Denshi Kinzoku Kabushiki Kaisha 25-1, Shinomiya 3-chome Hiratsukashi Kanagawa 254-0014 / JP
Former [2001/48]	For all designated states Komatsu Denshi Kinzoku Kabushiki Kaisha 25-1, Shinomiya 3-chome Hiratsukashi, Kanagawa 254-0014 / JP
Inventor(s)	01 / NAKAMURA, Kozo, Komatsu Denshi Kinzoku K.K. 25-1, Shinomiya 3-chome, Hiratsuka-shi Kanagawa 254-0014 / JP
	02 / SAISHOJI, Toshiaki, Komatsu Denshi Kinzoku K.K. 25-1, Shinomiya 3-chome, Hiratsuka-shi Kanagawa 254-0014 / JP
	03 / NAKAJIMA, Hirotaka, Komatsu Denshi Kinzoku K.K. 25-1, Shinomiya 3-chome, Hiratsuka-shi Kanagawa 254-0014 / JP
	04 / SADOHARA, Shinya, Komatsu Denshi Kinzoku K.K. 25-1, Shinomiya 3-chome, Hiratsuka-shi Kanagawa 254-0014 / JP
	05 / NISHIMURA, Masashi, Komatsu Denshi Kinzoku K.K. 25-1, Shinomiya 3-chome, Hiratsuka-shi Kanagawa 254-0014 / JP
	06 / KOTOOKA, Toshirou, Komatsu Denshi Kinzoku K.K. 25-1, Shinomiya 3-chome, Hiratsuka-shi Kanagawa 254-0014 / JP
	07 / SHIMANUKI, Yoshiyuki, Komatsu Denshi Kinzoku K.K. 25-1, Shinomiya 3-chome, Hiratsuka-shi Kanagawa 254-0014 / JP
	[2001/48]
Representative(s)	dompatent von Kreisler Selting Werner - Partnerschaft von Patent- und Rechtsanwälten mbB Deichmannhaus am Dom Bahnhofsvorplatz 1 50667 Köln / DE
	[N/P]
Former [2009/29]	Selting, Günther, et al Patentanwälte Von Kreisler, Selting, Werner Postfach 10 22 41 50462 Köln / DE
Former [2001/48]	Selting, Günther, et al Patentanwälte von Kreisler, Selting, Werner Deichmannhaus Postfach 10 22 41 50462 Köln / DE
Application number, filing date	99972700.1	19.11.1999
	[2001/48]
	WO1999JP06477
Priority number, date	JP19980330713	20.11.1998 Original published format: JP 33071398
	JP19990077166	23.03.1999 Original published format: JP 7716699
	JP19990129957	11.05.1999 Original published format: JP 12995799
	[2001/48]
Filing language	JA
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO0031325
	Date:	02.06.2000
	Language:	EN
	[2000/22]
	Type:	A1 Application with search report
	No.:	EP1158076
	Date:	28.11.2001
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 02.06.2000 takes the place of the publication of the European patent application.
	[2001/48]
	Type:	B1 Patent specification
	No.:	EP1158076
	Date:	14.11.2007
	Language:	EN
	[2007/46]
Search report(s)	International search report - published on:	JP	02.06.2000
	(Supplementary) European search report - dispatched on:	EP	06.05.2003
Classification	IPC:	C30B29/06, C30B15/00, C30B33/02, C30B15/14	[2003/15]
	CPC:	C30B29/06 (EP,US); C30B15/00 (KR); C30B15/14 (EP,US); C30B15/203 (EP,US); C30B15/206 (EP,US)
	Former IPC [2001/48]	C30B29/06, C30B15/00, C30B33/02
Designated contracting states	DE, IT [2001/48]
Title	German:	HERSTELLUNGSVERFAHREN FÜR SILIZIUMEINKRISTALL UND VORRICHTUNG ZUR HERSTELLUNG EINER SILIZIUMEINKRISTALLSTANGE UND BEHANDLUNGSVERFAHREN FÜR SILIZIUMEINKRISTALLWAFER	[2001/48]
	English:	PRODUCTION METHOD FOR SILICON SINGLE CRYSTAL AND PRODUCTION DEVICE FOR SINGLE CRYSTAL INGOT, AND HEAT TREATING METHOD FOR SILICON SINGLE CRYSTAL WAFER	[2001/48]
	French:	PROCEDE DE PRODUCTION DE MONOCRISTAL DE SILICIUM ET DISPOSITIF DE FABRICATION D'UN LINGOT MONOCRISTALLIN, PROCEDE DE TRAITEMENT THERMIQUE D'UNE TRANCHE DE SILICIUM MONOCRISTALLIN	[2001/48]
Entry into regional phase	12.06.2001	Translation filed
	12.06.2001	National basic fee paid
	12.06.2001	Search fee paid
	12.06.2001	Designation fee(s) paid
	12.06.2001	Examination fee paid
Examination procedure	29.03.2000	Request for preliminary examination filed International Preliminary Examining Authority: JP
	22.08.2000	Application deemed to be withdrawn, date of legal effect [2001/09]
	12.06.2001	Examination requested [2001/48]
	deleted	Deletion: Application deemed to be withdrawn, date of legal effect [2002/19]
	28.09.2000	Despatch of communication that the application is deemed to be withdrawn, reason: EURO-PCT translation(s) not filed [2002/19]
	18.02.2004	Despatch of a communication from the examining division (Time limit: M06)
	28.07.2004	Reply to a communication from the examining division
	15.09.2005	Despatch of a communication from the examining division (Time limit: M06)
	22.03.2006	Reply to a communication from the examining division
	30.05.2007	Communication of intention to grant the patent
	26.09.2007	Fee for grant paid
	26.09.2007	Fee for publishing/printing paid
Opposition(s)	15.08.2008	No opposition filed within time limit [2008/43]
Fees paid	Renewal fee
	28.11.2001	Renewal fee patent year 03
	28.11.2002	Renewal fee patent year 04
	26.11.2003	Renewal fee patent year 05
	13.11.2004	Renewal fee patent year 06
	28.11.2005	Renewal fee patent year 07
	28.11.2006	Renewal fee patent year 08
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]JPH03279290 ;
		[X]JPH07133187 ;
		[X]JPH05194076 ;
		[PX]JPH1192272 ;
		[A]US4437922 (BISCHOFF BERNARD K [US], et al) [A] 9-13 * figure 2; claim - *;
		[X]US4944834 (TADA KOHJI [JP], et al) [X] 6-8 * figure 5; claim - *;
		[A]EP0785298 (MEMC ELECTRONIC MATERIALS [US]) [A] 15,16,18-20* claim - *;
		[A]EP0823497 (MEMC ELECTRONIC MATERIALS [US]) [A] 14,17,21-23 * claim - *;
		[A]EP0866150 (WACKER SILTRONIC HALBLEITERMAT [DE]) [A] 1-5 * column 2, line 16 - line 57; claim - *;
		[A]WO9845508 (MEMC ELECTRONIC MATERIALS [US]) [A] 1-5 * page 10, line 25 - page 18, line 2; figure -; claim - *;
		[A]WO9845507 (MEMC ELECTRONIC MATERIALS [US]) [A] 9-13 * page 5, line 5 - page 6, line 5; examples 1-4; claim - *;
		US6036776 [ ] (KOTOOKA TOSHIRO [JP], et al) [ ] * column 9, line 31 - line 65; figure 6 *;
		[A] - NAKAMURA K ET AL, "Formation process of grown-in defects in Czochralski grown silicon crystals", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, (19970901), vol. 180, no. 1, ISSN 0022-0248, pages 61 - 72, XP004117243 [A] 1-5 * the whole document * DOI: http://dx.doi.org/10.1016/S0022-0248(97)00206-6
		[A] - AMMON VON W ET AL, "THE DEPENDENCE OF BULK DEFECTS ON THE AXIAL TEMPERATURE GRADIENT OFSILICON CRYSTALS DURING CZOCHRALSKI GROWTH", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, (19950601), vol. 151, no. 3/4, ISSN 0022-0248, pages 273 - 277, XP000514096 [A] 1-5 * the whole document * DOI: http://dx.doi.org/10.1016/0022-0248(95)00063-1
		[X] - PATENT ABSTRACTS OF JAPAN, (19920311), vol. 016, no. 098, Database accession no. (C - 0918), & JP03279290 A 19911210 (OSAKA TITANIUM CO LTD;OTHERS: 01) [X] 6-8 * abstract *
		[X] - PATENT ABSTRACTS OF JAPAN, (19950929), vol. 1995, no. 08, & JP07133187 A 19950523 (KOMATSU ELECTRON METALS CO LTD) [X] 6-8 * abstract *
		[X] - PATENT ABSTRACTS OF JAPAN, (19931119), vol. 017, no. 627, Database accession no. (C - 1131), & JP05194076 A 19930803 (KOMATSU DENSHI KINZOKU KK) [X] 7 * abstract *
		[PX] - PATENT ABSTRACTS OF JAPAN, (19990730), vol. 1999, no. 09, & JP11092272 A 19990406 (KOMATSU ELECTRON METALS CO LTD) [PX] 17-23 * abstract *
	International search	[X]JPH08268794 (SUMITOMO SITIX CORP);
		[X]JPH08330316 (SUMITOMO SITIX CORP);
		[A]JPH08333189 (SUMITOMO METAL IND);
		[XP]JPH11157995 (SUMITOMO SITIX CORP);
		[A] - KISSINGER G. ET AL., "Oxygen precipitation and stacking fault formation in wafers with a transition from vacancy-rich to interstitial-rich", ELECTROCHEMICAL SOCIETY PROCEEDINGS, (1998), vol. 98-13, pages 158 - 169, XP002924303

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.

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