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Extract from the Register of European Patents

EP About this file: EP1091396

EP1091396 - Plasma processing method [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  31.05.2013
Database last updated on 19.10.2024
Most recent event   Tooltip30.08.2013Lapse of the patent in a contracting state
New state(s): FR
published on 02.10.2013  [2013/40]
Applicant(s)For all designated states
TOKYO ELECTRON LIMITED
3-6, Akasaka 5-chome, Minato-ku
Tokyo-to / JP
[2012/30]
Former [2001/15]For all designated states
Tokyo Electron Limited
3-6, Akasaka 5-chome, Minato-ku
Tokyo-to / JP
Inventor(s)01 / Sano, Michiaki
2D Nanko Haitsu
582-1, Hojo
Tateyama-shi, Chiba / JP
 [2012/30]
Former [2001/15]01 / Sano, Michiaki
2D Nanko Haitsu, 582-1, Hojo
Tateyama-shi, Chiba / JP
Representative(s)Liesegang, Eva
Boehmert & Boehmert
Anwaltspartnerschaft mbB
Pettenkoferstrasse 22
80336 München / DE
[N/P]
Former [2012/30]Liesegang, Eva
Boehmert & Boehmert
Pettenkoferstrasse 20-22
80336 München / DE
Former [2001/15]Liesegang, Eva
Forrester & Boehmert, Franz-Joseph-Strasse 38
80801 München / DE
Application number, filing date00121014.527.09.2000
[2001/15]
Priority number, dateJP1999027691229.09.1999         Original published format: JP 27691299
[2001/15]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1091396
Date:11.04.2001
Language:EN
[2001/15]
Type: A3 Search report 
No.:EP1091396
Date:29.12.2004
[2004/53]
Type: B1 Patent specification 
No.:EP1091396
Date:25.07.2012
Language:EN
[2012/30]
Search report(s)(Supplementary) European search report - dispatched on:EP15.11.2004
ClassificationIPC:H01L21/311, G03F7/42
[2001/15]
CPC:
H01L21/02063 (EP,US); H01L21/3065 (KR); G03F7/427 (EP,US);
H01L21/31116 (EP,US); H01L21/31138 (EP,US); H01L21/76807 (EP,US)
Designated contracting statesDE,   FR,   IT [2005/38]
Former [2001/15]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Plasmabehandlungsverfahren[2001/15]
English:Plasma processing method[2001/15]
French:Procédé de traitement par plasma[2001/15]
Examination procedure24.11.2004Examination requested  [2005/04]
11.11.2005Despatch of a communication from the examining division (Time limit: M06)
09.05.2006Reply to a communication from the examining division
24.09.2007Despatch of a communication from the examining division (Time limit: M06)
04.04.2008Reply to a communication from the examining division
28.04.2011Despatch of a communication from the examining division (Time limit: M06)
28.10.2011Reply to a communication from the examining division
16.01.2012Communication of intention to grant the patent
10.05.2012Fee for grant paid
10.05.2012Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  11.11.2005
Opposition(s)26.04.2013No opposition filed within time limit [2013/27]
Fees paidRenewal fee
12.09.2002Renewal fee patent year 03
12.09.2003Renewal fee patent year 04
14.09.2004Renewal fee patent year 05
14.09.2005Renewal fee patent year 06
11.09.2006Renewal fee patent year 07
12.09.2007Renewal fee patent year 08
31.03.2008Renewal fee patent year 09
11.09.2009Renewal fee patent year 10
14.09.2010Renewal fee patent year 11
29.09.2011Renewal fee patent year 12
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipIT25.07.2012
FR01.10.2012
[2013/40]
Former [2013/23]IT25.07.2012
Documents cited:Search[X]JPH11135482  ;
 JPH11145111  [ ];
 [Y]GB2320335  (NEC CORP [JP]) [Y] 1-6 * abstract *;
 [XY]US5780359  (BROWN WILLIAM [US], et al) [X] 1 * column 3, line 19 - column 4, line 3 * [Y] 2-6;
 [PX]US6057247  (IMAI SHINICHI [JP], et al) [PX] 1,2 * column 6, line 30 - line 53; figure 4 *;
 [X]  - PATENT ABSTRACTS OF JAPAN, (19990831), vol. 1999, no. 10, & JP11135482 A 19990521 (MATSUSHITA ELECTRON CORP) [X] 1,2 * abstract *
 [Y]  - SCHATZ K D ET AL, "AN ELECTRON-BEAM PLASMA SOURCE AND GEOMETRY FOR PLASMA PROCESSING", PLASMA SOURCES SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, XX, (199305), vol. 2, no. 2, ISSN 0963-0252, pages 100 - 105, XP000853731 [Y] 1-6 * abstract *

DOI:   http://dx.doi.org/10.1088/0963-0252/2/2/005
    [ ] - PATENT ABSTRACTS OF JAPAN, (19990831), vol. 1999, no. 10, & JP11145111 A 19990528 (MATSUSHITA ELECTRON CORP) [ ] * abstract *
ExaminationEP0834916
 JPH1145873
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.