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EP About this file: EP1607493

EP1607493 - Plasma processes for depositing low dielectric constant films [Right-click to bookmark this link]
Status	No opposition filed within time limit Status updated on 16.10.2009 Database last updated on 17.05.2024
Most recent event Tooltip	11.03.2011	Lapse of the patent in a contracting state New state(s): IT	published on 13.04.2011 [2011/15]
Applicant(s)	For all designated states Applied Materials, Inc. 3050 Bowers Avenue Santa Clara, CA 95054 / US
	[N/P]
Former [2008/50]	For all designated states APPLIED MATERIALS, INC. 3050 Bowers Avenue Santa Clara, California 95054 / US
Former [2005/51]	For all designated states APPLIED MATERIALS, INC. 3050 Bowers Avenue Santa Clara California 95054 / US
Inventor(s)	01 / Cheung, David 235 Billingsgate Lane Foster City, CA 94404 / US
	02 / Yau, Wai-Fan 338 Alvarado Avenue Los Altos, CA / US
	03 / Mandal, Robert P. 12472 Arroyo de Arguello Saratoga, CA 95070 / US
	04 / Jeng, Shin-Puu 1, Nan-Ke N. Rd. Science-Based Industrial Park Shan-Hua Tainan 741 / TW
	05 / Liu, Kuo-Wei 163 N. San Tomas Aquino Road Campbell, CA 95008 / US
	06 / Lu, Yung-Cheng 3671 Greenlee Drive, No. 3 San Jose, CA 95117 / US
	07 / Barnes, Mike 12215 Santa Teresa Drive San Ramon, CA 94583 / US
	08 / Willecke, Ralf B. 7601 Churchill Way Dallas, TX 75251 / US
	09 / Moghadam, Farhad 15440 Via Colina Drive Saratoga, CA 95070 / US
	10 / Ishikawa, Tetsuya 873 Blossom Drive Santa Clara, CA 95050 / US
	11 / Poon, Tze 1267 Lakeside Drive, No. 2077 Sunnyvale, CA 94086 / US
	[2006/09]
Former [2005/51]	01 / Cheung, David 235 Billingsgate Lane Foster City, CA 94404 / US
	02 / Yau, Wai-Fan 338 Alvarado Avenue Los Altos, CA / US
	03 / Mandal, Robert P. 12472 Arroyo de Arguello Saratoga, CA 95070 / US
	04 / Jeng, Shin-Puu 1, Nan-Ke N. Rd. Science-Based Industrial Park Shan-Hua Tainan 741 / TW
	05 / Liu, Kuo-Wei 163 N. San Tomas Aquino Road Campbell, CA 95008 / US
	06 / Lu, Yung-Cheng 3671 Greenlee Drive, No. 3 San Jose, CA 95117 / US
	07 / Barnes, Mike 12215 Santa Teresa Drive San Ramon, CA 94583 / US
	08 / Willecke, Ralf B. 2250 Monroe Street, No. 336 Santa Clara, CA 95050 / US
	09 / Moghadam, Farhad 276 Old Adobe Road Los Gatos, CA 95030 / US
	10 / Ishikawa, Tetsuya 873 Blossom Drive Santa Clara, CA 95050 / US
	11 / Poon, Tze 1267 Lakeside Drive, No. 2077 Sunnyvale, CA 94086 / US
Representative(s)	Setna, Rohan P. Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB
	[N/P]
Former [2005/51]	Setna, Rohan P. Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB
Application number, filing date	05014450.0	10.02.1999
	[2005/51]
Priority number, date	US19980021788	11.02.1998 Original published format: US 21788
	US19980114682	13.07.1998 Original published format: US 114682
	US19980162915	29.09.1998 Original published format: US 162915
	US19980185555	04.11.1998 Original published format: US 185555
	[2005/51]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP1607493
	Date:	21.12.2005
	Language:	EN
	[2005/51]
	Type:	A3 Search report
	No.:	EP1607493
	Date:	04.07.2007
	[2007/27]
	Type:	B1 Patent specification
	No.:	EP1607493
	Date:	10.12.2008
	Language:	EN
	[2008/50]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	06.06.2007
Classification	IPC:	H01L21/316, C23C16/40, H01L21/768	[2007/27]
	CPC:	H01L21/76835 (EP,KR); H01L21/02274 (EP,KR); C23C16/401 (EP); H01L21/02126 (EP,KR); H01L21/02208 (KR); H01L21/02211 (EP); (+) H01L21/0228 (EP,KR); H01L21/02304 (EP,KR); H01L21/02362 (EP,KR); H01L21/76801 (EP); H01L21/76808 (EP,KR); H01L21/7681 (EP,KR); H01L21/76829 (EP); H01L21/76832 (EP,KR); H01L21/76834 (EP,KR); H01L2221/1031 (EP) (-)
	Former IPC [2005/51]	C23C16/40, H01L21/316, H01L21/768
Designated contracting states	BE, CH, DE, FR, GB, IE, IT, LI, NL [2005/51]
Title	German:	Plasmaabscheidungsprozesse bei dielektrischen Filmen mit geringer Dielektrizitätskonstante	[2005/51]
	English:	Plasma processes for depositing low dielectric constant films	[2005/51]
	French:	Traitements au plasma pour dépôt de films à faible constante diélectrique	[2005/51]
Examination procedure	27.12.2007	Examination requested [2008/07]
	04.02.2008	Despatch of a communication from the examining division (Time limit: M04)
	02.05.2008	Reply to a communication from the examining division
	10.06.2008	Communication of intention to grant the patent
	15.10.2008	Fee for grant paid
	15.10.2008	Fee for publishing/printing paid
Parent application(s) Tooltip	EP99906897.6 / EP1055012
Opposition(s)	11.09.2009	No opposition filed within time limit [2009/47]
Fees paid	Renewal fee
	04.07.2005	Renewal fee patent year 03
	04.07.2005	Renewal fee patent year 04
	04.07.2005	Renewal fee patent year 05
	04.07.2005	Renewal fee patent year 06
	04.07.2005	Renewal fee patent year 07
	06.02.2006	Renewal fee patent year 08
	05.02.2007	Renewal fee patent year 09
	08.02.2008	Renewal fee patent year 10
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition Tooltip	BE	10.12.2008
	IT	10.12.2008
	NL	10.12.2008
	IE	10.02.2009
	CH	28.02.2009
	LI	28.02.2009
	FR	02.03.2009
	GB	10.03.2009
	[2011/15]
Former [2010/23]	BE	10.12.2008
	NL	10.12.2008
	IE	10.02.2009
	CH	28.02.2009
	LI	28.02.2009
	FR	02.03.2009
	GB	10.03.2009
Former [2010/21]	BE	10.12.2008
	NL	10.12.2008
	IE	10.02.2009
	CH	28.02.2009
	LI	28.02.2009
	FR	02.03.2009
Former [2010/07]	BE	10.12.2008
	NL	10.12.2008
	IE	10.02.2009
	CH	28.02.2009
	LI	28.02.2009
Former [2009/47]	BE	10.12.2008
	NL	10.12.2008
	CH	28.02.2009
	LI	28.02.2009
Former [2009/32]	BE	10.12.2008
	NL	10.12.2008
Former [2009/27]	NL	10.12.2008
Documents cited:	Search	[A]JPS6450429 (SEMICONDUCTOR ENERGY LAB) [A] 1-11 * the whole document *;
		[A]EP0522799 (AMERICAN TELEPHONE & TELEGRAPH [US]) [A] 1-11 * page 3, line 21 - page 4, line 2; table 1 *;
		[A]JPH05267480 (RICOH CO LTD) [A] 1-11 * the whole document *;
		[A] - BAKLI M ET AL, "Materials and processing for 0.25 mum multilevel interconnect", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, (199701), vol. 33, no. 1, ISSN 0167-9317, pages 175 - 188, XP004054510 [A] 1-11 * the whole document * DOI: http://dx.doi.org/10.1016/S0167-9317(96)00043-3
	by applicant	JPS6450429
		US5000113
		EP0522799
		- MICROELECTRONIC ENGINEERING, (1997), vol. 33, pages 175 - 188

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