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Extract from the Register of European Patents

EP About this file: EP1775807

EP1775807 - Optical semiconductor apparatus with locked charge carrier density [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  08.10.2010
Database last updated on 24.04.2024
Most recent event   Tooltip08.10.2010Application deemed to be withdrawnpublished on 10.11.2010  [2010/45]
Applicant(s)For all designated states
Alcatel Lucent
54, rue la Boétie
75008 Paris / FR
[N/P]
Former [2007/16]For all designated states
Alcatel Lucent
54 rue La Boétie
75008 Paris / FR
Inventor(s)01 / Dagens, Béatrice
20 rue Fondouze
92160 Antony / FR
 [2007/16]
Representative(s)Bréda, Jean-Marc, et al
Marks & Clerk France
Conseils en Propriété Industrielle
Immeuble " Visium "
22 Avenue Aristide Briand
94117 Arcueil Cedex / FR
[N/P]
Former [2007/16]Bréda, Jean-Marc, et al
Marks & Clerk France 31-33, Avenue Aristide Briand
94117 Arcueil Cedex / FR
Application number, filing date06121844.205.10.2006
[2007/16]
Priority number, dateFR2005001051214.10.2005         Original published format: FR 0510512
[2007/16]
Filing languageFR
Procedural languageFR
PublicationType: A2 Application without search report 
No.:EP1775807
Date:18.04.2007
Language:FR
[2007/16]
Type: A3 Search report 
No.:EP1775807
Date:22.08.2007
[2007/34]
Search report(s)(Supplementary) European search report - dispatched on:EP25.07.2007
ClassificationIPC:H01S5/50, H01S5/34, H01S5/12
[2007/16]
CPC:
H01S5/50 (EP,US); B82Y20/00 (EP,US); H01S5/12 (EP,US);
H01S5/341 (EP,US); H01S5/5072 (EP,US)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2007/16]
TitleGerman:Optische Halbleiter-Vorrichtung mit gesperrter Ladungsträgerdichte[2007/16]
English:Optical semiconductor apparatus with locked charge carrier density[2007/16]
French:Dispositif optique à semiconducteur à densité de porteurs verrouillée[2007/16]
Examination procedure07.02.2008Examination requested  [2008/12]
05.03.2008Despatch of a communication from the examining division (Time limit: M06)
08.07.2008Reply to a communication from the examining division
01.05.2010Application deemed to be withdrawn, date of legal effect  [2010/45]
22.06.2010Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2010/45]
Fees paidRenewal fee
14.10.2008Renewal fee patent year 03
Penalty fee
Additional fee for renewal fee
31.10.200904   M06   Not yet paid
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Documents cited:Search[Y]EP0639876  (ALCATEL NV [NL]) [Y] 1-4* abstract *;
 [Y]US2003090779  (LEE DONGHAN [KR]) [Y] 1-4 * claim 3 * * paragraph [0013] *;
 [Y]EP1460742  (FUJITSU LTD [JP]) [Y] 1-4 * abstract * * claim 1 * * figure 4 * * saturation of ground energy transition state with J>J1 *;
 [Y]US2005122571  (KIM HO-IN [KR], et al) [Y] 1-4 * the whole document *;
 [X]  - MARKUS A ET AL, "Impact of intraband relaxation on the performance of a quantum-dot laser", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS IEEE USA, (200309), vol. 9, no. 5, ISSN 1077-260X, pages 1308 - 1314, XP002384466 [X] 1-4 * abstract * * pages 1308-131 * * Parties II et III * * figure 6 *

DOI:   http://dx.doi.org/10.1109/JSTQE.2003.819494
 [Y]  - BERG T W ET AL, "SATURATION AND NOISE PROPERTIES OF QUANTUM-DOT OPTICAL AMPLIFIERS", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, (200411), vol. 40, no. 11, ISSN 0018-9197, pages 1527 - 1539, XP001214184 [Y] 1-4 * the whole document *

DOI:   http://dx.doi.org/10.1109/JQE.2004.835114
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.