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Extract from the Register of European Patents

EP About this file: EP2041781

EP2041781 - SUBRESOLUTION SILICON FEATURES AND METHODS FOR FORMING THE SAME [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  04.05.2018
Database last updated on 20.05.2024
FormerExamination is in progress
Status updated on  28.01.2018
Most recent event   Tooltip04.05.2018Application deemed to be withdrawnpublished on 06.06.2018  [2018/23]
Applicant(s)For all designated states
Micron Technology, Inc.
8000 South Federal Way, P.O. Box 6
Boise, ID 83707 / US
[2009/14]
Inventor(s)01 / TOREK, Kevin, J.
1718 N. Kastle Falls Avenue
Meridian, Idaho 83642 / US
02 / FISCHER, Mark
5944 N. Brooklet Avenue
Boise, Idaho 83713 / US
03 / HANSON, Robert, J.
6442 S. Hornbeam Place
Boise, Idaho 83716 / US
 [2009/14]
Representative(s)Small, Gary James
Carpmaels & Ransford LLP
One Southampton Row
London WC1B 5HA / GB
[N/P]
Former [2009/14]Small, Gary James
Carpmaels & Ransford 43-45 Bloomsbury Square
London WC1A 2RA / GB
Application number, filing date07810048.428.06.2007
[2009/14]
WO2007US15146
Priority number, dateUS2006048680014.07.2006         Original published format: US 486800
[2009/14]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2008008204
Date:17.01.2008
Language:EN
[2008/03]
Type: A1 Application with search report 
No.:EP2041781
Date:01.04.2009
Language:EN
The application published by WIPO in one of the EPO official languages on 17.01.2008 takes the place of the publication of the European patent application.
[2009/14]
Search report(s)International search report - published on:EP17.01.2008
ClassificationIPC:H01L21/336, H01L29/786
[2009/14]
CPC:
H01L29/7851 (EP,KR,US); H01L29/785 (KR); H01L29/66795 (EP,KR,US);
H01L29/7853 (EP,KR,US); H01L29/7854 (EP,KR,US); H10B12/056 (EP,KR,US);
H10B12/31 (EP,KR,US); H10B12/36 (EP,KR,US) (-)
Designated contracting statesDE,   GB,   IT [2009/33]
Former [2009/14]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
Extension statesALNot yet paid
BANot yet paid
HRNot yet paid
MKNot yet paid
RSNot yet paid
TitleGerman:SILIZIUM MIT SUBRESOLUTIONSEIGENSCHAFTEN UND HERSTELLUNGSVERFAHREN DAFÜR[2009/14]
English:SUBRESOLUTION SILICON FEATURES AND METHODS FOR FORMING THE SAME[2009/14]
French:DÉTAILS DE SILICIUM EN SOUS-RÉSOLUTION ET PROCÉDÉS DE FORMATION[2009/14]
Entry into regional phase27.01.2009National basic fee paid 
27.01.2009Designation fee(s) paid 
27.01.2009Examination fee paid 
Examination procedure14.05.2008Request for preliminary examination filed
International Preliminary Examining Authority: EP
27.01.2009Amendment by applicant (claims and/or description)
27.01.2009Examination requested  [2009/14]
15.02.2009Loss of particular rights, legal effect: designated state(s)
24.03.2009Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, FR, GR, HU, IE, IS, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR
07.05.2009Despatch of a communication from the examining division (Time limit: M04)
17.09.2009Reply to a communication from the examining division
16.06.2014Despatch of a communication from the examining division (Time limit: M06)
19.12.2014Reply to a communication from the examining division
03.01.2018Application deemed to be withdrawn, date of legal effect  [2018/23]
29.01.2018Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2018/23]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  07.05.2009
Fees paidRenewal fee
27.01.2009Renewal fee patent year 03
11.06.2010Renewal fee patent year 04
13.06.2011Renewal fee patent year 05
14.06.2012Renewal fee patent year 06
10.06.2013Renewal fee patent year 07
12.06.2014Renewal fee patent year 08
10.06.2015Renewal fee patent year 09
10.06.2016Renewal fee patent year 10
Penalty fee
Additional fee for renewal fee
30.06.201711   M06   Not yet paid
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Cited inInternational search[Y]US2002011612  (HIEDA KATSUHIKO [JP]) [Y] 38,39 * paragraph [0436] - paragraph [0445]; figures 56,57 *;
 [X]US2002140039  (ADKISSON JAMES W [US], et al) [X] 18,22-37 * the whole document *;
 [A]US2004150037  (KATSUMATA RYOTA [JP], et al) [A] 33-40 * figure 1D *;
 [Y]US2004262687  (JUNG IN-SOO [KR], et al) [Y] 19-21 * the whole document *;
 [XY]US2005104091  (TABERY CYRUS E [US], et al) [X] 1-18,22-37,40 * paragraph [0017] - paragraph [0026]; figures 1-6 * [Y] 19-21,38,39;
 [X]US2005136617  (JANG YOUNG-CHUL [KR]) [X] 1-3,6,7,11,14,15,33 * paragraphs [0035] - [0037] *;
 [A]US6911697  (WANG HAIHONG [US], et al) [A] 1-40 * column 3, line 7 - column 5, line 54; figures 1-8 *;
 [X]US2005167754  (KANG HEE-SOO [KR], et al) [X] 33-38 * paragraph [0066] - paragraph [0095]; figures 11-16 *;
 [X]US2005255643  (AHN YOUNG-JOON [KR], et al) [X] 33-35,40 * the whole document *;
 [A]  - I. RUGE, H. MADER, Halbleiter-Technologie, BERLIN, SPRINGER VERLAG, (1991), XP002456276 [A] 11-17,24-28 * page 212 - page 215 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.