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Extract from the Register of European Patents

EP About this file: EP2219209

EP2219209 - Method of forming insulating film and method of producing semiconductor device [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  20.07.2012
Database last updated on 17.05.2024
Most recent event   Tooltip20.07.2012Withdrawal of applicationpublished on 22.08.2012  [2012/34]
Applicant(s)For all designated states
Panasonic Corporation
1006, Oaza Kadoma
Kadoma-shi
Osaka 571-8501 / JP
[N/P]
Former [2010/33]For all designated states
Panasonic Corporation
1006, Oaza Kadoma Kadoma-shi
Osaka 571-8501 / JP
Inventor(s)01 / Eriguchi, Koji
c/o Panasonic Corporation IPROC IP Development Center 7F Twin 21 OBP Panasonic Tower 2-1-61, Shiromi Chuo-ku
Osaka 540-6207 / JP
 [2010/33]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstraße 4
80802 München / DE
[N/P]
Former [2010/33]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date10004286.001.02.2002
[2010/33]
Priority number, dateJP2001026669304.09.2001         Original published format: JP 2001266693
JP2001002965806.02.2001         Original published format: JP 2001029658
[2010/33]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2219209
Date:18.08.2010
Language:EN
[2010/33]
Type: A3 Search report 
No.:EP2219209
Date:08.02.2012
Language:EN
[2012/06]
Search report(s)(Supplementary) European search report - dispatched on:EP06.01.2012
ClassificationIPC:H01L21/3105, H01L21/336, H01L21/8234, H01L21/316, H01L29/78, H01L27/088, H01L21/28, H01L21/3115, H01L29/51
[2012/05]
CPC:
H01L21/28185 (EP,US); H01L21/28194 (EP,US); H01L21/28202 (EP,US);
H01L21/28211 (EP,US); H01L21/3115 (EP,US); H01L21/31155 (EP,US);
H01L21/823462 (EP,US); H01L29/513 (EP,US); H01L29/517 (EP,US);
H01L29/518 (EP,US); H01L29/6659 (EP,US); H01L21/0214 (EP,US);
H01L21/02164 (EP,US); H01L21/02181 (EP,US); H01L21/02189 (EP,US);
H01L21/022 (EP,US); H01L21/31641 (US) (-)
Former IPC [2010/33]H01L21/3105, H01L21/336, H01L21/8234, H01L21/316, H01L29/78, H01L27/088
Designated contracting statesDE,   FR,   GB,   NL [2010/33]
TitleGerman:Verfahren zur Bildung einer Isolationsschicht und Verfahren zur Herstellung eines Halbleiterbauelements[2010/33]
English:Method of forming insulating film and method of producing semiconductor device[2010/33]
French:Procédé de formation de film isolant et procédé de production de dispositif semi-conducteur[2010/33]
Examination procedure22.04.2010Examination requested  [2010/33]
17.07.2012Application withdrawn by applicant  [2012/34]
Parent application(s)   TooltipEP02710479.3  / EP1271632
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20020710479) is  25.05.2010
Fees paidRenewal fee
22.04.2010Renewal fee patent year 03
22.04.2010Renewal fee patent year 04
22.04.2010Renewal fee patent year 05
22.04.2010Renewal fee patent year 06
22.04.2010Renewal fee patent year 07
22.04.2010Renewal fee patent year 08
22.04.2010Renewal fee patent year 09
25.02.2011Renewal fee patent year 10
Penalty fee
Additional fee for renewal fee
29.02.201211   M06   Not yet paid
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Documents cited:Search[X]US6013553  (WALLACE ROBERT M [US], et al) [X] 1-3 * claim 27 *;
 [X]US6020024  (MAITI BIKAS [US], et al) [X] 1-3 * column 3, lines 1-65 *;
 [A]  - WILK G. D. AND WALLACE R. M., "Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon", APPLIED PHYSICS LETTERS, USA, (19990510), vol. 74, no. 19, pages 2854 - 28565, XP002666093 [A] 1-3 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.124036
by applicant   - LEE ET AL., IEEE/INTERNATIONAL ELECTRON DEVICE MEETING, vol. 99, page 133
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.