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Extract from the Register of European Patents

EP About this file: EP3526812

EP3526812 - METHOD FOR ANISOTROPIC DEEP REACTIVE-ION ETCHING WITH A FLUORINE GAS MIXTURE [Right-click to bookmark this link]
Former [2019/34]DEVICE AND METHOD FOR ANISOTROPIC DEEP REACTIVE-ION ETCHING WITH A FLUORINE GAS MIXTURE
[2020/08]
StatusNo opposition filed within time limit
Status updated on  04.06.2021
Database last updated on 24.04.2024
FormerThe patent has been granted
Status updated on  26.06.2020
FormerGrant of patent is intended
Status updated on  04.02.2020
FormerRequest for examination was made
Status updated on  19.07.2019
FormerThe international publication has been made
Status updated on  28.04.2018
Formerunknown
Status updated on  28.10.2017
Most recent event   Tooltip15.07.2022Lapse of the patent in a contracting state
New state(s): MK
published on 17.08.2022  [2022/33]
Applicant(s)For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastraße 27c
80686 München / DE
[2019/34]
Inventor(s)01 / WIELAND, Robert
c/o Fraunhofer-Einrichting für Mikrosysteme und
Festkörper-Technologien
EMFT
Hanastrasse 27d
81686 München / DE
 [2019/34]
Representative(s)Hersina, Günter, et al
Schoppe, Zimmermann, Stöckeler
Zinkler, Schenk & Partner mbB
Patentanwälte
Radlkoferstrasse 2
81373 München / DE
[2019/34]
Application number, filing date17784936.116.10.2017
[2019/34]
WO2017EP76265
Priority number, dateDE20161022024817.10.2016         Original published format: DE102016220248
[2019/34]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO2018073135
Date:26.04.2018
Language:DE
[2018/17]
Type: A1 Application with search report 
No.:EP3526812
Date:21.08.2019
Language:DE
The application published by WIPO in one of the EPO official languages on 26.04.2018 takes the place of the publication of the European patent application.
[2019/34]
Type: B1 Patent specification 
No.:EP3526812
Date:29.07.2020
Language:DE
[2020/31]
Search report(s)International search report - published on:EP26.04.2018
ClassificationIPC:H01L21/3065, B81C1/00, H01J37/32
[2020/08]
CPC:
H01L21/30655 (EP,KR,US); B81C1/00619 (EP,KR,US); H01J37/32082 (EP,KR,US);
H01J37/32357 (EP,KR,US); H01J37/3244 (EP,US); H01J37/32449 (EP,KR,US);
H01L21/31116 (KR); H01L21/67069 (KR,US); B81C2201/0112 (EP,KR,US);
H01J2237/3341 (US) (-)
Former IPC [2019/34]H01L21/3065
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2019/34]
Extension statesBANot yet paid
MENot yet paid
Validation statesMANot yet paid
MDNot yet paid
TitleGerman:VERFAHREN ZUM ANISOTROPEN DRIE-ÄTZEN MIT FLUORGASMISCHUNG[2020/08]
English:METHOD FOR ANISOTROPIC DEEP REACTIVE-ION ETCHING WITH A FLUORINE GAS MIXTURE[2020/08]
French:PROCÉDÉ DE GRAVURE IONIQUE RÉACTIVE PROFONDE ANISOTROPE FAISANT APPEL À UN MÉLANGE GAZEUX FLUORÉ[2020/08]
Former [2019/34]VORRICHTUNG UND VERFAHREN ZUM ANISOTROPEN DRIE-ÄTZEN MIT FLUORGASMISCHUNG
Former [2019/34]DEVICE AND METHOD FOR ANISOTROPIC DEEP REACTIVE-ION ETCHING WITH A FLUORINE GAS MIXTURE
Former [2019/34]DISPOSITIF ET PROCÉDÉ DE GRAVURE IONIQUE RÉACTIVE PROFONDE ANISOTROPE FAISANT APPEL À UN MÉLANGE GAZEUX FLUORÉ
Entry into regional phase17.04.2019National basic fee paid 
17.04.2019Designation fee(s) paid 
17.04.2019Examination fee paid 
Examination procedure17.08.2018Request for preliminary examination filed
International Preliminary Examining Authority: EP
17.04.2019Examination requested  [2019/34]
17.04.2019Date on which the examining division has become responsible
27.11.2019Amendment by applicant (claims and/or description)
05.02.2020Communication of intention to grant the patent
15.06.2020Fee for grant paid
15.06.2020Fee for publishing/printing paid
15.06.2020Receipt of the translation of the claim(s)
Opposition(s)30.04.2021No opposition filed within time limit [2021/27]
Fees paidRenewal fee
10.10.2019Renewal fee patent year 03
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See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU16.10.2017
AL29.07.2020
CY29.07.2020
CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
MC29.07.2020
MK29.07.2020
MT29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SI29.07.2020
SK29.07.2020
SM29.07.2020
TR29.07.2020
IE16.10.2020
LU16.10.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
CH31.10.2020
LI31.10.2020
IS29.11.2020
PT30.11.2020
[2022/33]
Former [2022/27]HU16.10.2017
AL29.07.2020
CY29.07.2020
CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
MC29.07.2020
MT29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SI29.07.2020
SK29.07.2020
SM29.07.2020
TR29.07.2020
IE16.10.2020
LU16.10.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
CH31.10.2020
LI31.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/46]AL29.07.2020
CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
MC29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SI29.07.2020
SK29.07.2020
SM29.07.2020
IE16.10.2020
LU16.10.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
CH31.10.2020
LI31.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/37]AL29.07.2020
CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
MC29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SI29.07.2020
SK29.07.2020
SM29.07.2020
LU16.10.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
CH31.10.2020
LI31.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/36]AL29.07.2020
CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
MC29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SI29.07.2020
SK29.07.2020
SM29.07.2020
LU16.10.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/31]AL29.07.2020
CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
MC29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SK29.07.2020
SM29.07.2020
LU16.10.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/28]AL29.07.2020
CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SK29.07.2020
SM29.07.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/25]AL29.07.2020
CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SM29.07.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/22]CZ29.07.2020
DK29.07.2020
EE29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
PL29.07.2020
RO29.07.2020
RS29.07.2020
SE29.07.2020
SM29.07.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/20]DK29.07.2020
ES29.07.2020
FI29.07.2020
HR29.07.2020
IT29.07.2020
LT29.07.2020
LV29.07.2020
PL29.07.2020
RS29.07.2020
SE29.07.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/10]ES29.07.2020
FI29.07.2020
HR29.07.2020
LT29.07.2020
LV29.07.2020
PL29.07.2020
RS29.07.2020
SE29.07.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
IS29.11.2020
PT30.11.2020
Former [2021/09]ES29.07.2020
FI29.07.2020
LT29.07.2020
SE29.07.2020
BG29.10.2020
NO29.10.2020
GR30.10.2020
PT30.11.2020
Former [2021/08]ES29.07.2020
FI29.07.2020
LT29.07.2020
SE29.07.2020
BG29.10.2020
NO29.10.2020
PT30.11.2020
Former [2021/07]FI29.07.2020
LT29.07.2020
NO29.10.2020
Cited inInternational search[XI]US5501893  (LAERMER FRANZ [DE], et al) [X] 12-16,18 * column 3, line 43 - column 4; figure 1 * [I] 19;
 [I]WO2009080615  (SOLVAY FLUOR GMBH [DE], et al) [I] 1-11 * page 2, line 12 - page 4, line 10 * * page 6, line 18 - page 9, line 27 * * examples 1,3 *;
 [X]  - KARL KUEHL ET AL, "Advanced silicon trench etching in MEMS applications", PROCEEDINGS OPTICAL DIAGNOSTICS OF LIVING CELLS II, US, (19980831), vol. 3511, doi:10.1117/12.324331, ISSN 0277-786X, ISBN 978-1-5106-1324-9, pages 97 - 105, XP055441716 [X] 12-17 * 2.2. Etch equipment;; figure 3 *

DOI:   http://dx.doi.org/10.1117/12.324331
 [A]  - GIRARD G ET AL, "Matrix-distributed ECR-PECVD for high-rate deposition of silica for applications in integrated optics", VISUAL COMMUNICATIONS AND IMAGE PROCESSING; 20-1-2004 - 20-1-2004; SAN JOSE,, (20030101), vol. 4944, doi:10.1117/12.468294, ISBN 978-1-62841-730-2, pages 62 - 71, XP002436134 [A] 19 * abstract * * paragraphs [002A] - [002D] *

DOI:   http://dx.doi.org/10.1117/12.468294
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