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Extract from the Register of European Patents

EP About this file: EP0566838

EP0566838 - Manufacturing method of thin film transistor [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  28.02.2003
Database last updated on 19.10.2024
Most recent event   Tooltip28.02.2003Application deemed to be withdrawnpublished on 16.04.2003  [2003/16]
Applicant(s)For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza Kadoma Kadoma-shi Osaka
571-8501 / JP
[N/P]
Former [1994/50]For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Ohaza Kadoma
Kadoma-shi, Osaka-fu, 571 / JP
Former [1993/43]For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
1006-banchi, Oaza-Kadoma
Kadoma-shi, Osaka 571 / JP
Inventor(s)01 / Furuta, Mamoru
46-2-305, Yamadaike-Higashi-machi
Hirakata-shi, Osaka 573-01 / JP
02 / Kawamura, Tetsuya
1-16-8-405, Higashinakaburi
Hirakata-shi, Osaka 573 / JP
03 / Yoshioka, Tatsuo
19-25-304, Kourien-Higashino-cho
Hirakata-shi, Osaka 573 / JP
04 / Sano, Hiroshi
46-1-207, Yamadaike-Higashi-machi
Hirakata-shi, Osaka 573-01 / JP
05 / Miyata, Yutaka
2-19-14, Kitayamato
Ikoma-shi, Nara 630-01 / JP
[1993/43]
Representative(s)Eisenführ Speiser
Patentanwälte Rechtsanwälte PartGmbB
Postfach 10 60 78
28060 Bremen / DE
[N/P]
Former [1993/43]Eisenführ, Speiser & Partner
Martinistrasse 24
D-28195 Bremen / DE
Application number, filing date93102520.918.02.1993
[1993/43]
Priority number, dateJP1992003466021.02.1992         Original published format: JP 3466092
JP1992020583603.08.1992         Original published format: JP 20583692
[1993/43]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0566838
Date:27.10.1993
Language:EN
[1993/43]
Type: A3 Search report 
No.:EP0566838
Date:31.07.1996
[1996/31]
Search report(s)(Supplementary) European search report - dispatched on:EP12.06.1996
ClassificationIPC:H01L21/336, H01L21/84
[1993/43]
CPC:
H01L21/32155 (EP,US); H01L29/66757 (EP,US); H01L29/66765 (EP,US);
H01L29/78675 (EP,US); H01L29/78678 (EP,US); Y10S148/15 (EP,US)
Designated contracting statesDE,   GB [1993/43]
TitleGerman:Herstellungsverfahren eines Dünnschicht Transistors[1993/43]
English:Manufacturing method of thin film transistor[1993/43]
French:Procédé de fabrication d'un transistor à couches minces[1993/43]
Examination procedure18.02.1993Examination requested  [1993/43]
25.02.1999Despatch of a communication from the examining division (Time limit: M06)
11.08.1999Reply to a communication from the examining division
04.02.2000Despatch of a communication from the examining division (Time limit: M06)
09.08.2000Reply to a communication from the examining division
28.03.2002Despatch of a communication from the examining division (Time limit: M06)
08.08.2002Application deemed to be withdrawn, date of legal effect  [2003/16]
11.11.2002Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2003/16]
Fees paidRenewal fee
24.02.1995Renewal fee patent year 03
24.02.1996Renewal fee patent year 04
25.02.1997Renewal fee patent year 05
27.02.1998Renewal fee patent year 06
01.03.1999Renewal fee patent year 07
29.02.2000Renewal fee patent year 08
28.02.2001Renewal fee patent year 09
28.02.2002Renewal fee patent year 10
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XA]EP0383230  (SEIKO EPSON CORP [JP]) [X] 1-3,8,9 * column 12, line 33 - line 54 * * column 11, line 33 - column 12, line 18; figure 1 * [A] 10,13,18,19;
 [YA]JPS5830123  ;
 [YA]JPS62219574  ;
 [A]JPS6329978  ;
 [A]JPH02123743  ;
 [X]EP0361609  (PHILIPS ELECTRONICS UK LTD [GB], et al) [X] 10,19 * column 7, line 42 - column 8, line 32; figure 2 *;
 [A]JPH01276768  ;
 [A]JPH0439967  ;
 US5141885  [ ] (YOSHIDA AKIHISA [JP], et al) [ ] * abstract *
 [YA]  - PATENT ABSTRACTS OF JAPAN, (19830511), vol. 007, no. 107, Database accession no. (E - 174), & JP58030123 A 19830222 (TOKYO SHIBAURA DENKI KK) [Y] 1-3,9 * abstract * [A] 10,13,19
 [YA]  - PATENT ABSTRACTS OF JAPAN, (19880312), vol. 012, no. 080, Database accession no. (E - 590), & JP62219574 A 19870926 (SHARP CORP) [Y] 1-3,9 * abstract * [A] 10,13,19
 [A]  - PATENT ABSTRACTS OF JAPAN, (19880707), vol. 012, no. 239, Database accession no. (E - 630), & JP63029978 A 19880208 (SHARP CORP) [A] 1,3,7-10,13,17-19 * abstract *
 [A]  - SATOSHI INOUE ET AL, "LOW TEMPERATURE CMOS SELF-ALIGNED POLY-SI TFTS AND CIRCUIT SCHEME UTILIZING NEW ION DOPING AND MASKING TECHNIQUE", PROCEEDINGS OF THE INTERNATIONAL ELECTRON DEVICES MEETING, WASHINGTON,, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, (19911208), pages 555 - 558, XP000342189 [A] 1-6,9,10,13-16,19 * page 556, column L - page 557, column R; figure 5 *
 [A]  - KIKUO ONO ET AL, "EFFECT OF CHANNEL IMPLANTATION ON THE DEVICE PERFORMANCE OF LOW TEMPERATURE PROCESSED POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS", JAPANESE JOURNAL OF APPLIED PHYSICS, (19901201), vol. 29, no. 12 PART 01, pages 2705 - 2710, XP000263386 [A] 1-3,7-10,13,17-19 * page 2705, column R - page 1706, column L; figure 1 *

DOI:   http://dx.doi.org/10.1143/JJAP.29.2705
 [A]  - PATENT ABSTRACTS OF JAPAN, (19900731), vol. 014, no. 354, Database accession no. (E - 0958), & JP02123743 A 19900511 (FUJITSU LTD) [A] 1,4,5,10,12,14,15 * abstract *
 [A]  - HIRANO R ET AL, "FABRICATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY ION SHOWER DOPING TECHNIQUE", ELECTRONICS & COMMUNICATIONS IN JAPAN, PART II - ELECTRONICS, vol. 71, no. 10, PART 2, pages 40 - 45, XP000043970 [A] 1,4-6,9,10,14-16,19 * page 40, column L - page 43, column R *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19900126), vol. 014, no. 045, Database accession no. (E - 0880), & JP01276768 A 19891107 (FUJITSU LTD) [A] 10,11 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19920525), vol. 016, no. 224, Database accession no. (E - 1206), & JP04039967 A 19920210 (MATSUSHITA ELECTRIC IND CO LTD) [A] 4,10,11,14,19
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.