EP0831529 - Semiconductor device and method of manufacturing the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 19.02.2010 Database last updated on 15.05.2024 | Most recent event Tooltip | 19.02.2010 | No opposition filed within time limit | published on 24.03.2010 [2010/12] | Applicant(s) | For all designated states Panasonic Corporation 1006, Oaza Kadoma Kadoma-shi Osaka 571-8501 / JP | [N/P] |
Former [2008/47] | For all designated states Panasonic Corporation 1006, Oaza Kadoma Kadoma-shi Osaka 571-8501 / JP | ||
Former [1998/13] | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Oaza Kadoma Kadoma-shi, Osaka-fu, 571 / JP | Inventor(s) | 01 /
Yabu, Toshiki 4-14-1, Nagaodai Hirakata-shi, Osaka 573-01 / JP | 02 /
Segawa, Mizuki 7-11-64, Nagao-motormachi Hirakata-shi, Osaka 573-01 / JP | [1998/13] | Representative(s) | Grünecker Patent- und Rechtsanwälte PartG mbB Leopoldstraße 4 80802 München / DE | [N/P] |
Former [1998/13] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät Maximilianstrasse 58 80538 München / DE | Application number, filing date | 97115629.4 | 09.09.1997 | [1998/13] | Priority number, date | JP19960239403 | 10.09.1996 Original published format: JP 23940396 | [1998/13] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0831529 | Date: | 25.03.1998 | Language: | EN | [1998/13] | Type: | A3 Search report | No.: | EP0831529 | Date: | 02.02.2000 | [2000/05] | Type: | B1 Patent specification | No.: | EP0831529 | Date: | 15.04.2009 | Language: | EN | [2009/16] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 20.12.1999 | Classification | IPC: | H01L23/485, H01L23/522 | [1998/13] | CPC: |
H01L24/05 (EP,US);
H01L21/76846 (KR);
H01L21/02164 (KR);
H01L21/02271 (KR);
H01L21/304 (KR);
H01L21/32115 (KR);
H01L21/76829 (KR);
H01L21/76877 (KR);
H01L21/76895 (KR);
H01L23/3171 (EP,KR,US);
H01L23/3192 (EP,KR,US);
H01L23/5222 (EP,US);
H01L24/03 (EP,KR,US);
H01L2224/05624 (EP,US);
H01L2224/05644 (EP,US);
H01L2924/01004 (EP,US);
H01L2924/01005 (EP,US);
H01L2924/01006 (EP,US);
H01L2924/01013 (EP,US);
H01L2924/01014 (EP,US);
H01L2924/01029 (EP,US);
H01L2924/01033 (EP,US);
H01L2924/01074 (EP,US);
H01L2924/01075 (EP,US);
H01L2924/01079 (EP,US);
H01L2924/05042 (EP,US);
H01L2924/12044 (EP,US);
| C-Set: |
H01L2224/05624, H01L2924/00014 (EP,US)
| Designated contracting states | DE, FR, GB [2000/41] |
Former [1998/13] | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Halbleiteranordnung und deren Herstellungsverfahren | [1998/13] | English: | Semiconductor device and method of manufacturing the same | [1998/13] | French: | Dispositif semi-conducteur et procédé de sa fabrication | [1998/13] | Examination procedure | 21.03.2000 | Examination requested [2000/20] | 29.10.2007 | Despatch of a communication from the examining division (Time limit: M04) | 06.03.2008 | Reply to a communication from the examining division | 30.10.2008 | Communication of intention to grant the patent | 02.03.2009 | Fee for grant paid | 02.03.2009 | Fee for publishing/printing paid | Opposition(s) | 18.01.2010 | No opposition filed within time limit [2010/12] | Fees paid | Renewal fee | 29.09.1999 | Renewal fee patent year 03 | 27.09.2000 | Renewal fee patent year 04 | 26.09.2001 | Renewal fee patent year 05 | 27.09.2002 | Renewal fee patent year 06 | 29.09.2003 | Renewal fee patent year 07 | 28.09.2004 | Renewal fee patent year 08 | 29.09.2005 | Renewal fee patent year 09 | 29.09.2006 | Renewal fee patent year 10 | 27.09.2007 | Renewal fee patent year 11 | 26.09.2008 | Renewal fee patent year 12 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY]US4761386 (BUYNOSKI MATTHEW S [US]) [X] 1-6,16-19 * column 2, line 22 - column 4, line 1; figures 1,2 * [Y] 1-7,12-19,22; | [X]JPS62224037 ; | [Y]US5472913 (HAVEMANN ROBERT H [US], et al) [Y] 1-7,12-19,22 * column 3, line 65 - column 7, line 33; figure 2C *; | [Y]US5527737 (JENG SHIN-PUU [US]) [Y] 1-7,13,14,16-19,22 * column 3, line 59 - column 6, line 6; figures 2,8 *; | [A]US5136364 (BYRNE ROBERT C [US]) [A] 1,16 * column 2, line 17 - column 3, line 35; figures 2-5 *; | [A]US5445994 (GILTON TERRY L [US]) [A] 20 * column 3, lines 5-31 * * column 3, line 58 - column 5, line 21; figures 3A-F *; | [A]EP0514888 (CANON KK [JP]) [A] 21 * column 4, lines 13-38; figure 6 *; | [E]EP0825646 (TOSHIBA KK [JP]) [E] 8,10,11,25 * column 11, line 36 - column 16, line 36; figure 26 *; | [X]WO9619826 (NAT SEMICONDUCTOR CORP [US]) [X] 26 * page 7, paragraph 4 - page 14, paragraph 1; figures 1A-H *; | [A]JPH07130737 ; | [A]US5371047 (GRECO STEPHEN E [US], et al) [A] 23-26 * column 3, line 18 - column 4, line 52; figures 2-4 * | [X] - PATENT ABSTRACTS OF JAPAN, (19880323), vol. 012, no. 089, Database accession no. (E - 592), & JP62224037 A 19871002 (NIPPON DENSO CO LTD) [X] 1,2 * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19950929), vol. 1995, no. 08, & JP07130737 A 19950519 (NEC CORP) [A] 8-11,23-26 * abstract * |