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Extract from the Register of European Patents

EP About this file: EP0831529

EP0831529 - Semiconductor device and method of manufacturing the same [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  19.02.2010
Database last updated on 15.05.2024
Most recent event   Tooltip19.02.2010No opposition filed within time limitpublished on 24.03.2010  [2010/12]
Applicant(s)For all designated states
Panasonic Corporation
1006, Oaza Kadoma
Kadoma-shi
Osaka 571-8501 / JP
[N/P]
Former [2008/47]For all designated states
Panasonic Corporation
1006, Oaza Kadoma Kadoma-shi
Osaka 571-8501 / JP
Former [1998/13]For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza Kadoma
Kadoma-shi, Osaka-fu, 571 / JP
Inventor(s)01 / Yabu, Toshiki
4-14-1, Nagaodai
Hirakata-shi, Osaka 573-01 / JP
02 / Segawa, Mizuki
7-11-64, Nagao-motormachi
Hirakata-shi, Osaka 573-01 / JP
[1998/13]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstraße 4
80802 München / DE
[N/P]
Former [1998/13]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Maximilianstrasse 58
80538 München / DE
Application number, filing date97115629.409.09.1997
[1998/13]
Priority number, dateJP1996023940310.09.1996         Original published format: JP 23940396
[1998/13]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0831529
Date:25.03.1998
Language:EN
[1998/13]
Type: A3 Search report 
No.:EP0831529
Date:02.02.2000
[2000/05]
Type: B1 Patent specification 
No.:EP0831529
Date:15.04.2009
Language:EN
[2009/16]
Search report(s)(Supplementary) European search report - dispatched on:EP20.12.1999
ClassificationIPC:H01L23/485, H01L23/522
[1998/13]
CPC:
H01L24/05 (EP,US); H01L21/76846 (KR); H01L21/02164 (KR);
H01L21/02271 (KR); H01L21/304 (KR); H01L21/32115 (KR);
H01L21/76829 (KR); H01L21/76877 (KR); H01L21/76895 (KR);
H01L23/3171 (EP,KR,US); H01L23/3192 (EP,KR,US); H01L23/5222 (EP,US);
H01L24/03 (EP,KR,US); H01L2224/05624 (EP,US); H01L2224/05644 (EP,US);
H01L2924/01004 (EP,US); H01L2924/01005 (EP,US); H01L2924/01006 (EP,US);
H01L2924/01013 (EP,US); H01L2924/01014 (EP,US); H01L2924/01029 (EP,US);
H01L2924/01033 (EP,US); H01L2924/01074 (EP,US); H01L2924/01075 (EP,US);
H01L2924/01079 (EP,US); H01L2924/05042 (EP,US); H01L2924/12044 (EP,US);
H01L2924/30105 (EP,US); Y10S257/915 (EP,US) (-)
C-Set:
H01L2224/05624, H01L2924/00014 (EP,US)
Designated contracting statesDE,   FR,   GB [2000/41]
Former [1998/13]AT,  BE,  CH,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Halbleiteranordnung und deren Herstellungsverfahren[1998/13]
English:Semiconductor device and method of manufacturing the same[1998/13]
French:Dispositif semi-conducteur et procédé de sa fabrication[1998/13]
Examination procedure21.03.2000Examination requested  [2000/20]
29.10.2007Despatch of a communication from the examining division (Time limit: M04)
06.03.2008Reply to a communication from the examining division
30.10.2008Communication of intention to grant the patent
02.03.2009Fee for grant paid
02.03.2009Fee for publishing/printing paid
Opposition(s)18.01.2010No opposition filed within time limit [2010/12]
Fees paidRenewal fee
29.09.1999Renewal fee patent year 03
27.09.2000Renewal fee patent year 04
26.09.2001Renewal fee patent year 05
27.09.2002Renewal fee patent year 06
29.09.2003Renewal fee patent year 07
28.09.2004Renewal fee patent year 08
29.09.2005Renewal fee patent year 09
29.09.2006Renewal fee patent year 10
27.09.2007Renewal fee patent year 11
26.09.2008Renewal fee patent year 12
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XY]US4761386  (BUYNOSKI MATTHEW S [US]) [X] 1-6,16-19 * column 2, line 22 - column 4, line 1; figures 1,2 * [Y] 1-7,12-19,22;
 [X]JPS62224037  ;
 [Y]US5472913  (HAVEMANN ROBERT H [US], et al) [Y] 1-7,12-19,22 * column 3, line 65 - column 7, line 33; figure 2C *;
 [Y]US5527737  (JENG SHIN-PUU [US]) [Y] 1-7,13,14,16-19,22 * column 3, line 59 - column 6, line 6; figures 2,8 *;
 [A]US5136364  (BYRNE ROBERT C [US]) [A] 1,16 * column 2, line 17 - column 3, line 35; figures 2-5 *;
 [A]US5445994  (GILTON TERRY L [US]) [A] 20 * column 3, lines 5-31 * * column 3, line 58 - column 5, line 21; figures 3A-F *;
 [A]EP0514888  (CANON KK [JP]) [A] 21 * column 4, lines 13-38; figure 6 *;
 [E]EP0825646  (TOSHIBA KK [JP]) [E] 8,10,11,25 * column 11, line 36 - column 16, line 36; figure 26 *;
 [X]WO9619826  (NAT SEMICONDUCTOR CORP [US]) [X] 26 * page 7, paragraph 4 - page 14, paragraph 1; figures 1A-H *;
 [A]JPH07130737  ;
 [A]US5371047  (GRECO STEPHEN E [US], et al) [A] 23-26 * column 3, line 18 - column 4, line 52; figures 2-4 *
 [X]  - PATENT ABSTRACTS OF JAPAN, (19880323), vol. 012, no. 089, Database accession no. (E - 592), & JP62224037 A 19871002 (NIPPON DENSO CO LTD) [X] 1,2 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19950929), vol. 1995, no. 08, & JP07130737 A 19950519 (NEC CORP) [A] 8-11,23-26 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.